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Infineon Technologies FF6MR20KM1H | Demoboard EVAL-FFXMR20KM1HDR
Evaluation board for CoolSiC™ MOSFET 2000 V 62 mm half-bridge modules
Details
| Topologie | Gegentaktwandler (Halbbrücken) |
| Eingangsspannung | 24 V |
| Ausgang 1 | 40 V |
| Ausgang 2 | 0.3 V |
| IC-Revision | 1.0 |
Beschreibung
The evaluation board EVAL-FFXMR20KM1HDR allows the customer to begin initial characterizationmeasurements very quickly. Due to the usage of the EiceDRIVER™ 1ED38x0Mc12M and its flexible parametersetting options via I2C-BUS the EVAL-FFXMR20KM1HDR can be quickly adapted to different applications (likeDC/DC-converter, Solar applications, UPS systems, Solid state transformer, Drives and others) withoutchanging the hardware. This flexible parameter settings are provided by 27 configuration registers accessiblevia I2C. These configuration options influence many threshold and timing paramaters to optimize the circuit forits intended application. In addition to the flexible parameter setting options via I2C-BUS, the EiceDRIVER™1ED38x0Mc12M contains 16 status registers. These can also be read out via the I2C-BUS and can thereforeprovide information about various states of the driver stage. This is the so-called condition monitoring and canserve as enabler, if wanted, for predictive maintenance. For more information we refer to the EiceDRIVER™1ED38x0Mc12M reference manual here.Without the need to modify external components during evaluation, the whole process becomes much fasterthan before and enables, what we call, rapid-prototyping.Another important feature of the EiceDRIVER™ 1ED38x0Mc12M is the soft-off behavior in the event of an worstcase error, the short circuit. The driver has an integratet DESAT module which switches off the driver in a shortcircuit event. Due to the high currents that occur in these event and a simultaneous hard switch-off, very highpeak voltages can occur due to parasitic inductances. These can reduce the life-time of the power switch or candestroy the whole application. With soft-off behavior, only a part of the maximum gate current is used forswitch-off. As a result, the power switch turns off more slowly and the peak voltage can be limited significantly.Both the soft-off behavior and the permitted current levels (within certain limits) can be set via a configurationregister.
Eigenschaften
- Half-bridge driver for 62 mm, 2kV modules with CoolSiC™ Trench MOSFET technology
- Driver IC 1ED3890MC12M or 1ED3890MU12M (X3 digital) with I2C bus for parameter adjustment
- Electrically and mechanically suitable for 62 mm, 2kV modules with CoolSiC™ Trench MOSFET technology
- Negative voltage adjustment from -5 V to 0 V
- Positive voltage adjustment for high switching frequencies
- Proper PCB design to limit the PCB heating during operation
- 40 V absolute maximum output supply voltage
- Booster stage to increase the sourcing and sinking gate current capability
- Separate source and sink output for optimized gate driving
- Adjustable clamp/clamp driver/ADC pin
- I2C bus for parameter adjustment, state and fault feedback, ADC measurements, and condition monitoring
- Two precise VCE(sat) detection (DESAT2) circuits with fault output, adjustable leading-edge blanking time andindividually adjustable trigger voltages, filter times
- Two-level turn-off (TLTO) with adjustable slopes, plateau time, and plateau level
- Selectable turn-off: hard turn-off and two-level turn-off
- Adjustable soft turn-off after desaturation detection
- Adjustable input filter
- Hardware undervoltage lockout (UVLO) protection with hysteresis for the input side
- Adjustable hardware UVLO with hysteresis for IGBTs and MOSFETs on both VCC2 and VEE2 rails with activeshutdown
- Adjustable software UVLO for accurate supply voltage monitoring on both VCC2 and VEE2 rails
- ADC measurement of internal parameters: supply voltages and internal temperature
- Pin state reporting via I2C and fault
- Internal counters for DESAT or UVLO events
- Gate driver operation at high ambient temperature up to 125°C with over-temperature shutdown at 160°C(±10°C)
- Tight IC-to-IC propagation delay matching (tPDD,max = 30 ns)
- Undervoltage lockout protection with hysteresis for input and output side with active shutdown
- High common-mode transient immunity CMTI = 200 kV/µs
- Small space-saving DSO-16 fine-pitch package with large creepage distance (>8 mm)
- Gate driver safety certification:
- UL 1577 recognized (planned) with VISO,test = 6840 V (rms) for 1 s, VISO = 5700 V (rms) for 60 s
- IEC 60747-17/VDE 0884-11 approval (planned) with VIORM = 1.767 kV (peak, reinforced)
Typische Anwendungen
- DC/DC converter
- Solar application
- UPS systems
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | Bauform | Betriebstemperatur | Q(%) | DF(%) | RISO | Keramiktyp | L(mm) | B(mm) | H(mm) | Fl(mm) | Verpackung | Pins | Typ | Montageart | Arbeitsspannung(V (AC)) | Wicklungstyp | Wicklungsanzahl | L(µH) | Zmax(Ω) | IR(mA) | RDC max.(Ω) | VR(V (DC)) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 50 V(DC), 100 pF, ±5% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 50 V(DC) | Kapazität100 pF | Kapazität±5% | Bauform0603 | Betriebstemperatur -55 °C up to +125 °C | Güte1000 % | – | Isolationswiderstand10 GΩ | KeramiktypNP0 Klasse I | Länge1.6 mm | Breite0.8 mm | Höhe0.8 mm | Pad Dimension0.4 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | Nennspannung50 V (DC) | |||||
| WCAP-CSGP MLCCs 50 V(DC), 100 nF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 50 V(DC) | Kapazität100 nF | Kapazität±10% | Bauform0603 | Betriebstemperatur -55 °C up to +125 °C | – | Verlustfaktor3 % | Isolationswiderstand5 GΩ | KeramiktypX7R Klasse II | Länge1.6 mm | Breite0.8 mm | Höhe0.8 mm | Pad Dimension0.4 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | Nennspannung50 V (DC) | |||||
| WCAP-CSGP MLCCs 25 V(DC), 1 µF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 25 V(DC) | Kapazität1 µF | Kapazität±10% | Bauform0603 | Betriebstemperatur -55 °C up to +125 °C | – | Verlustfaktor10 % | Isolationswiderstand0.5 GΩ | KeramiktypX7R Klasse II | Länge1.6 mm | Breite0.8 mm | Höhe0.8 mm | Pad Dimension0.4 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | Nennspannung25 V (DC) | |||||
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 | WR-PHD Stiftleisten - Zweireihig, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten - Zweireihig | – | – | – | Betriebstemperatur -40 °C up to +105 °C | – | – | Isolationswiderstand1000 MΩ | – | Länge7.62 mm | – | – | – | VerpackungBeutel | Pins6 | TypGerade | MontageartTHT | Arbeitsspannung250 V (AC) | – | – | – | – | Nennstrom3000 mA | – | – | |||
750317493 | WE-AGDT Auxiliary Gate Drive Transformer, –, – | Simulation– | Downloads– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Produktserie WE-AGDT Auxiliary Gate Drive Transformer | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – |