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Infineon Technologies 2EDN7524R | Demoboard EVAL_3KW_2LLC_CFD7
3kW dual-phase LLC evaluation board with 600V CoolMOS™ CFD7 SJ MOSFET
Details
| Topologie | LLC Resonanzwandler |
| Eingangsspannung | 350-410 V |
| Ausgang 1 | 58 V / 55 A |
| IC-Revision | 1.0 |
Beschreibung
This evaluation board shows how to design a dual-phase LLC system solution of a telecom rectifier with the target to meet 80+ Titanium Standard efficiency requirements. For this purpose the following technologies have been used:The latest 600V CoolMOS™ CFD7 SJ MOSFET technology (IPW60R031CFD7) on the primary side and OptiMOS™ 5 150V low voltage power MOSFET in SuperSO8 (BSC093N15NS5) in the synchronous rectification secondary stage, in combination with quasi-resonant CoolSET™ (ICE2QR2280Z), high voltage gate driver EiceDRIVER™ 1EDI (1EDI60N12AF), high speed driver ICs for high voltage MOSFETs, low side gate driver EiceDRIVER™ 2EDN (2EDN7524R) for sychronous rectification MOSFETs and a digital LLC XMC™ microcontroller (XMC4400-F64K512 BA).
Eigenschaften
- Dual-phase concept
- Full digital control
- Graphical user interface
Typische Anwendungen
- Industrial battery chargers
- Telecom rectifiers, Industrial SMPS
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(nH) | LR(nH) | IR(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCM SMT-Hochstrominduktivität, 470 nH, 200 nH | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCM SMT-Hochstrominduktivität | Induktivität470 nH | Nenninduktivität200 nH | Nennstrom47.5 A | Sättigungsstrom 135.1 A | Sättigungsstrom @ 30%46.8 A | Gleichstromwiderstand0.165 mΩ | Eigenresonanzfrequenz22 MHz | MaterialMnZn |