| Topology | LLC Resonant Converter |
| Input voltage | 350-410 V |
| Output 1 | 58 V / 55 A |
| IC revision | 1.0 |
This evaluation board shows how to design a dual-phase LLC system solution of a telecom rectifier with the target to meet 80+ Titanium Standard efficiency requirements. For this purpose the following technologies have been used:The latest 600V CoolMOS™ CFD7 SJ MOSFET technology (IPW60R031CFD7) on the primary side and OptiMOS™ 5 150V low voltage power MOSFET in SuperSO8 (BSC093N15NS5) in the synchronous rectification secondary stage, in combination with quasi-resonant CoolSET™ (ICE2QR2280Z), high voltage gate driver EiceDRIVER™ 1EDI (1EDI60N12AF), high speed driver ICs for high voltage MOSFETs, low side gate driver EiceDRIVER™ 2EDN (2EDN7524R) for sychronous rectification MOSFETs and a digital LLC XMC™ microcontroller (XMC4400-F64K512 BA).
Order Code | Datasheet | Simulation | Downloads | Status | Product series | L(nH) | LR(nH) | IR(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Samples | |
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![]() | WE-HCM SMT High Current Flat Wire Inductor, 470 nH, 200 nH | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-HCM SMT High Current Flat Wire Inductor | Inductance470 nH | Rated Inductance200 nH | Rated Current47.5 A | Saturation Current @ 10%35.1 A | Saturation Current @ 30%46.8 A | DC Resistance0.165 mΩ | Self Resonant Frequency22 MHz | MaterialMnZn |