IC-Hersteller Indie Semiconductor
IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (137)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (267)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (335)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (96)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (54)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Indie Semiconductor TR2_120_017 | Demoboard EVALKIT SiRad Easy® r4
120-GHz Highly Integrated IQ Transceiver with Antennas in Package in Silicon Germanium Technology
Details
| Topologie | Sonstige Topologie |
| Eingangsspannung | 3.3 V |
| IC-Revision | 0.4 |
Beschreibung
The TR2_120_017 integrated frontend transceiver is ideal for operation in the ISM band (122 GHz – 123 GHz), consisting of one transmit and two receive channels, and antennas incorporated within the device package. The transmitter channel features a gain-controlled power amplifier and the two receiver channels each have a gain-controlled low-noise amplifier, a quadrature mixer and poly-phase filter. The on-chip VCO provides a tuning range of more than 6 GHz. The device is housed within a LGA66, 6 × 10 mm² package.
Eigenschaften
- Radar front end (RFE) with antennas in package for 122-GHz ISM band
- One transmit and two receive channels
- Single supply voltage of 3.3 V
- Fully ESD protected device
- Low power consumption of 760 mW in continuous operating mode
- Duty Cycling possible
- Integrated low phase noise push-push VCO
- Receiver with homodyne quadrature mixer
- Wide bandwidth of up to 7.5 GHz
- LGA66 leadless package 6 × 10mm²
- Pb-free, RoHS compliant package
Typische Anwendungen
- Short Range Radar Systems: Up to 10 meters
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR(V (DC)) | Bauform | Betriebstemperatur | Q(%) | DF(%) | RISO | Keramiktyp | L(mm) | B(mm) | H(mm) | Fl(mm) | Verpackung | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(Ω) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 50 V(DC), 220 pF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 50 V(DC) | Kapazität220 pF | Kapazität±10% | Nennspannung50 V (DC) | Bauform0402 | Betriebstemperatur -55 °C up to +125 °C | – | Verlustfaktor2.5 % | Isolationswiderstand10 GΩ | KeramiktypX7R Klasse II | Länge1 mm | Breite0.5 mm | Höhe0.5 mm | Pad Dimension0.25 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 10 V(DC), 330 pF, ±5% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 10 V(DC) | Kapazität330 pF | Kapazität±5% | Nennspannung10 V (DC) | Bauform0402 | Betriebstemperatur -55 °C up to +125 °C | Güte1000 % | – | Isolationswiderstand10 GΩ | KeramiktypNP0 Klasse I | Länge1 mm | Breite0.5 mm | Höhe0.5 mm | Pad Dimension0.25 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 16 V(DC), 2.2 nF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 16 V(DC) | Kapazität2.2 nF | Kapazität±10% | Nennspannung16 V (DC) | Bauform0402 | Betriebstemperatur -55 °C up to +125 °C | – | Verlustfaktor3.5 % | Isolationswiderstand10 GΩ | KeramiktypX7R Klasse II | Länge1 mm | Breite0.5 mm | Höhe0.5 mm | Pad Dimension0.25 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 50 V(DC), 3.3 nF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 50 V(DC) | Kapazität3.3 nF | Kapazität±10% | Nennspannung50 V (DC) | Bauform0402 | Betriebstemperatur -55 °C up to +125 °C | – | Verlustfaktor2.5 % | Isolationswiderstand10 GΩ | KeramiktypX7R Klasse II | Länge1 mm | Breite0.5 mm | Höhe0.5 mm | Pad Dimension0.25 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 16 V(DC), 100 nF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 16 V(DC) | Kapazität100 nF | Kapazität±10% | Nennspannung16 V (DC) | Bauform0402 | Betriebstemperatur -55 °C up to +125 °C | – | Verlustfaktor5 % | Isolationswiderstand5 GΩ | KeramiktypX7R Klasse II | Länge1 mm | Breite0.5 mm | Höhe0.5 mm | Pad Dimension0.25 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | |||||
 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | Bauform0402 | Betriebstemperatur -55 °C up to +125 °C | – | – | – | – | Länge1 mm | Breite0.5 mm | Höhe0.5 mm | Pad Dimension0.25 mm | – | Impedanz @ 100 MHz470 Ω | Maximale Impedanz1200 Ω | Maximale Impedanz300 MHz | Nennstrom 2620 mA | Gleichstromwiderstand0.45 Ω | TypHochgeschwindigkeit |