GaNPower GPI90010DF88 | Demoboard GPI-HV-ACDC-QR-1.4-02

Beschreibung

These devices are N-channel 900 V Power GaN HEMTs based on proprietary E-mode GaN onsilicon technology. The resulting product has extremely low on state resistance, very low input capacitanceand zero reverse recovery charge making it especially suitable for applications which require superiorpower density, ultra-high switching frequency and outstanding efficienc

Eigenschaften

 Ultra-low RDS(on) High dv/dt capability Extremely low inputcapacitance ZeroQrr Outstanding switching performance Low Profile

Typische Anwendungen

• Switching PowerApplications, EVOBC and DC-DC Converters, UPS, Inverters,PV
• Server andTelecomPowerApplication

Weiterführende Informationen

• Produktseite des IC-Herstellers