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GaNPower GPI90010DF88 | Demoboard GPI-HV-ACDC-QR-1.4-02
N-channel 900V10AGaNPowerHEMT in DFN 8X8 Package
Overview
| Topology | Flyback Converter |
| Input voltage | 200-500 V |
| IC revision | 1 |
Description
These devices are N-channel 900 V Power GaN HEMTs based on proprietary E-mode GaN onsilicon technology. The resulting product has extremely low on state resistance, very low input capacitanceand zero reverse recovery charge making it especially suitable for applications which require superiorpower density, ultra-high switching frequency and outstanding efficienc
Features
Ultra-low RDS(on) High dv/dt capability Extremely low inputcapacitance ZeroQrr Outstanding switching performance Low Profile
Typical applications
- Switching PowerApplications, EVOBC and DC-DC Converters, UPS, Inverters,PV
- Server andTelecomPowerApplication