IC-Hersteller Cambridge GaN Devices
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Details
| Topologie | Sonstige Topologie |
| IC-Revision | 1 |
Beschreibung
The HF board includes the ICeGaN, the half-bridge gate driver IC, current transformers, and the heatsink which is mounted on the top side of the ICeGaN.
Eigenschaften
The PCB thickness of this HF daughterboard is 1.6 mm, with 2 oz copper thickness. A thinner PCB is not recommended asit could bend, leading to poor thermal connection hence an increase in the operating temperature of the ICeGaN devices.
Weiterführende Informationen
Artikeldaten
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR (V (DC)) | Bauform | Betriebstemperatur | Q (%) | RISO | Keramiktyp | L (mm) | W (mm) | H (mm) | Fl (mm) | Verpackung | Z @ 100 MHz (Ω) | Zmax (Ω) | Testbedingung Zmax | IR 2 (mA) | RDC max. (Ω) | Typ | L (µH) | n | IR (mA) | ∫Udt (µVs) | VT (V (AC)) | RDC 1 (mΩ) | RDC 2 (Ω) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 885012006057 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-CSGP MLCCs 50 V(DC) | 100 pF | ±5% | 50 | 0603 | -55 °C up to +125 °C | 1000 | 10 GΩ | NP0 Klasse I | 1.6 | 0.8 | 0.8 | 0.4 | 7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | – | ||
 | 742792096 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-CBF SMT-Ferrit | – | – | – | 0805 | -55 °C up to +125 °C | – | – | – | 2 | 1.2 | 0.9 | 0.5 | – | 1000 | 1000 | 100 MHz | 1000 | 0.3 | High Current | – | – | 800 | – | – | – | – | ||
 | 749251100 | SPEC | – | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-CST Stromwandler | – | – | 80 | EE5 | -40 °C up to +125 °C | – | – | – | 7.7 | 6.9 | 5.33 | – | – | – | – | – | – | – | – | 2000 | 1:100 | 20000 | 50 | 500 | 0.75 | 5.5 |
| Muster |
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| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR (V (DC)) | Bauform | Betriebstemperatur | Q (%) | RISO | Keramiktyp | L (mm) | W (mm) | H (mm) | Fl (mm) | Verpackung | Z @ 100 MHz (Ω) | Zmax (Ω) | Testbedingung Zmax | IR 2 (mA) | RDC max. (Ω) | Typ | L (µH) | n | IR (mA) | ∫Udt (µVs) | VT (V (AC)) | RDC 1 (mΩ) | RDC 2 (Ω) | Muster |
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