IC-Hersteller Cambridge GaN Devices
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Cambridge GaN Devices CGD65B240SH2 | Demoboard Quasi-Resonant Flyback 65W Reference Design
H2 series 650 V / 240 mΩ GaN HEMT with ICeGaN® Gate, Current Sense and NL³ Circuit
Details
| Topologie | Sperrwandler |
| Eingangsspannung | 100-260 V |
| Ausgang 1 | 20 V |
| IC-Revision | 2.0 |
Beschreibung
Introducing the CGD65B240SH2, an enhancement mode GaN-on-silicon power transistor that capitalizes on the unique material properties of GaN to deliver high current, high breakdown voltage, and high switching frequency for a wide range of electronics applications..
Eigenschaften
- Using ICeGaN 650 V, 240 mΩ in DFN 5x6
- Power density of >27W/in3
- Vin 100-260 VAC
- Vout 20 VDC
- Maximum Efficiency 93.8%
- Typical frequency range 25 - 240kHz
- No shunt current sense resistors – uses ICeGaN current sense feature
Typische Anwendungen
- PD chargers
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | VT(V (AC)) | n | Betriebstemperatur | L(mm) | B(mm) | H(mm) | Package | Input | VCE max.(V) | IF max.(mA) | Testbedingung CTR | CTR min.(%) | CTR max.(%) | VISO(V (RMS)) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-STST Super Tiny Signal Transformer, Langstreckenerkennung bei niedriger Frequenz, 2000 µH | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-STST Super Tiny Signal Transformer | Induktivität2000 µH | Prüfspannung400 V (AC) | Übersetzungsverhältnis1:4.5:4.5:1 | Betriebstemperatur -40 °C up to +105 °C | Länge4.7 mm | Breite3.22 mm | Höhe2.9 mm | – | – | – | – | – | – | – | – | |||
 | WL-OCPT LSOP-4, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWL-OCPT LSOP-4 | – | – | – | Betriebstemperatur -55 °C up to +110 °C | Länge7.6 mm | Breite3.6 mm | Höhe2 mm | PackageLSOP4 | InputDC | Kollektor Emitter Spannung80 V | Durchlassstrom60 mA | IF = 5 mA VCE = 5 V | Current Transfer Ratio [min.]300 % | Current Transfer Ratio [max.]600 % | Isolationsspannung5000 V (RMS) |