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Cambridge GaN Devices CGD65B240SH2 | Demoboard Quasi-Resonant Flyback 65W Reference Design
H2 series 650 V / 240 mΩ GaN HEMT with ICeGaN® Gate, Current Sense and NL³ Circuit
Overview
| Topology | Flyback Converter |
| Input voltage | 100-260 V |
| Output 1 | 20 V |
| IC revision | 2.0 |
Description
Introducing the CGD65B240SH2, an enhancement mode GaN-on-silicon power transistor that capitalizes on the unique material properties of GaN to deliver high current, high breakdown voltage, and high switching frequency for a wide range of electronics applications..
Features
- Using ICeGaN 650 V, 240 mΩ in DFN 5x6
- Power density of >27W/in3
- Vin 100-260 VAC
- Vout 20 VDC
- Maximum Efficiency 93.8%
- Typical frequency range 25 - 240kHz
- No shunt current sense resistors – uses ICeGaN current sense feature
Typical applications
- PD chargers
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | L(µH) | VT(V (AC)) | n | Operating Temperature | L(mm) | W(mm) | H(mm) | Package | Input | VCE max.(V) | IF max.(mA) | Test Condition CTR | CTR min.(%) | CTR max.(%) | VISO(V (RMS)) | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-STST Super Tiny Signal Transformer, Long distance sensing at low frequency, 2000 µH | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-STST Super Tiny Signal Transformer | Inductance2000 µH | Insulation Test Voltage400 V (AC) | Turns Ratio1:4.5:4.5:1 | Operating Temperature -40 °C up to +105 °C | Length4.7 mm | Width3.22 mm | Height2.9 mm | – | – | – | – | – | – | – | – | |||
 | WL-OCPT LSOP-4, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWL-OCPT LSOP-4 | – | – | – | Operating Temperature -55 °C up to +110 °C | Length7.6 mm | Width3.6 mm | Height2 mm | PackageLSOP4 | InputDC | Collector Emitter Voltage80 V | Forward Current60 mA | IF = 5 mA VCE = 5 V | Current Transfer Ratio [min.]300 % | Current Transfer Ratio [max.]600 % | Isolation Voltage5000 V (RMS) |