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Details
| Topologie | Sonstige Topologie |
| IC-Revision | 1 |
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Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | RDC max.(mΩ) | fres(MHz) | Bauform | Version | ISAT,10%(A) | ISAT,30%(A) | IR,40K(A) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-PD SMT-Speicherdrossel, 3.5 µH, 14.7 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität3.5 µH | Performance Nennstrom14.7 A | Gleichstromwiderstand9 mΩ | Eigenresonanzfrequenz45 MHz | Bauform1210 | VersionGestanzt | Sättigungsstrom 116.5 A | Sättigungsstrom @ 30%20.3 A | Nennstrom11 A | ||||
| WE-PD Speicherdrossel, 4.7 µH, 13.1 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD Speicherdrossel | Induktivität4.7 µH | Performance Nennstrom13.1 A | Gleichstromwiderstand11 mΩ | Eigenresonanzfrequenz38 MHz | Bauform1210 | VersionGestanzt | Sättigungsstrom 113 A | Sättigungsstrom @ 30%16 A | Nennstrom9.3 A |