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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 4.5-36 V |
| Schaltfrequenz | 400-2200 kHz |
| Ausgang 1 | 1 V |
Typische Anwendungen
- Central Information Displays, Infotainment Displays, Instrument Clusters
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | fres(MHz) | VOP(V) | Montageart | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR(A) | Z @ 1 GHz(Ω) | H(mm) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-MAPI SMT-Speicherdrossel, 2.2 µH, 7.1 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität2.2 µH | Performance Nennstrom7.1 A | Sättigungsstrom @ 30%9.2 A | Gleichstromwiderstand22 mΩ | Eigenresonanzfrequenz35 MHz | Betriebsspannung80 V | MontageartSMT | – | – | – | Nennstrom5.2 A | – | Höhe3.1 mm | – | ||||
 | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | Gleichstromwiderstand2.5 mΩ | – | – | MontageartSMT | Impedanz @ 100 MHz56 Ω | Maximale Impedanz90 Ω | Maximale Impedanz1000 MHz | Nennstrom10 A | Impedanz @ 1 GHz90 Ω | Höhe2.28 mm | TypHochstrom |