| Topologie | Abwärtswandler |
| Eingangsspannung | 7-40 V |
| Ausgang 1 | 2.5 V / 1.2 A |
| Ausgang 2 | 1.8 V / 1.2 A |
| Ausgang 3 | 3.3 V / 1.2 A |
| Ausgang 4 | 5 V / 1.2 A |
Demonstration circuit 2860A is a quad step-down DC/DC switching converter featuring the LTM8051 silent switcher μModule® regulator. The demo board is designed to deliver quad 5V/1.2A, 3.3V/1.2A, 2.5V/1.2A and 1.8V/1.2A outputs from a 7V to 40V input. The Silent Switcher® architecture minimizes EMI while achieving high efficiency at frequencies up to 3MHz. The modes of operation (Burst Mode® operation or discontinuous mode/SYNC) are jumper selectable. Burst Mode operation improves efficiency at light loads.The LTM8051 is a fixed frequency PWM regulator with current mode control scheme. The switching frequency of channel 1 and channel 4 is set by an appropriate resistor (R11) from the RT14 pin to ground. The switching frequency of channel 2 and channel 3 is set by another appropriate resistor (R23) from the RT23 pin to ground. The RUN14 pin (RUN14 terminal) can be used to set the LTM8051 channel 1 and channel 4 in micro power shut-down mode, while the RUN23 pin (RUN23 terminal) can be used to set the channel 2 and channel 3 in shutdown mode. Output tracking and soft start pins (TRSS1/TRSS2/TRSS3/TRSS4) allow user control of output voltage ramp rate during startup. The power good output of each channel (PG1/PG2/PG3/PG4) will be low when that channel’s output voltage is outside of the ±7.5% regulation window.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(mm) | f(mm) | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | fres(MHz) | Montageart | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR(mA) | Z @ 1 GHz(Ω) | H(mm) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-LHMI SMT Speicherdrossel, 4.45 mm, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | Länge4.45 mm | – | Induktivität0.22 µH | Performance Nennstrom11.4 A | Sättigungsstrom 110.8 A | Sättigungsstrom @ 30%22.3 A | Gleichstromwiderstand7.3 mΩ | Eigenresonanzfrequenz195 MHz | MontageartSMT | – | – | – | – | – | Höhe1.8 mm | – | ||||
![]() | WE-MPSB EMI Multilayer Power Suppression Bead, 4.5 mm, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MPSB EMI Multilayer Power Suppression Bead | Länge4.5 mm | – | – | – | – | – | Gleichstromwiderstand6 mΩ | – | MontageartSMT | Impedanz @ 100 MHz100 Ω | Maximale Impedanz160 Ω | Maximale Impedanz1100 MHz | Nennstrom8000 mA | Impedanz @ 1 GHz150 Ω | Höhe2.3 mm | TypHochstrom | ||||
![]() | WA-SNSR Self-Retaining Spacer, 6.4 mm, 4.8 mm | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWA-SNSR Self-Retaining Spacer | Länge6.4 mm | Bohrung in Blende4.8 mm | – | – | – | – | – | – | – | – | – | – | – | – | – | – |