| Topologie | Abwärtswandler |
| Eingangsspannung | 7-40 V |
| Schaltfrequenz | 200-3000 kHz |
| Ausgang 1 | 5 V / 3 A |
The LTM8024 is 40VIN, dual 3.5A or single 7A step-down Silent Switcher µModule® regulator. The Silent Switcher architecture minimizes EMI while delivering high efficiency at frequencies up to 3MHz. Included in the package are the controllers, power switches, inductors, and support components. Operating over a wide input voltage range, the LTM8024 supports output voltages from 0.8V to 8V, and a switching frequency range of 200kHz to 3MHz, each set by a single resistor. Only the bulk input and output filter capacitors are needed to finish the design. The LTM8024 product video is available on website.The LTM8024 is packaged in a thermally enhanced, compact (9mm × 11.25mm × 3.32mm) over-molded ball grid array (BGA) package suitable for automated assembly by standard surface mount equipment. The LTM8024 is RoHS compliant.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | fres(MHz) | Montageart | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR(mA) | Z @ 1 GHz(Ω) | H(mm) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-LHMI SMT Speicherdrossel, 0.22 µH, 11.4 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | Induktivität0.22 µH | Performance Nennstrom11.4 A | Sättigungsstrom 110.8 A | Sättigungsstrom @ 30%22.3 A | Gleichstromwiderstand7.3 mΩ | Eigenresonanzfrequenz195 MHz | MontageartSMT | – | – | – | – | – | Höhe1.8 mm | – | ||||
![]() | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | – | Gleichstromwiderstand6 mΩ | – | MontageartSMT | Impedanz @ 100 MHz100 Ω | Maximale Impedanz160 Ω | Maximale Impedanz1100 MHz | Nennstrom8000 mA | Impedanz @ 1 GHz150 Ω | Höhe2.3 mm | TypHochstrom |