IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (140)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (267)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (337)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (97)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (58)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Details
| Topologie | Sonstige Topologie |
| Eingangsspannung | 8-36 V |
| Schaltfrequenz | 100-3000 kHz |
| Ausgang 1 | 48.3 V / 18 A |
Beschreibung
The evaluation circuit EVAL-LTC7893-AZ is a single output synchronous step-up converter that drives GaN field effect transistors (FETs). The EVAL-LTC7893-AZ evaluation board features 100V GaN FETs.The EVAL-LTC7893-AZ features the LTC®7893: a low quiescent current, high frequency (programmable fixed frequency from 100kHz up to 3MHz), step-up DC/DC synchronous controller, with a dedicated driver feature for GaN FETs, which can also be used to drive logic-level silicon FETs.The EVAL-LTC7893-AZ operates over an input voltage range from 8V to 36V and produces a 48V output with load current up to 18A (without heatsink). A mode selector allows the EVAL-LTC7893-AZ to operate in forced continuous operation, pulse-skipping or Burst Mode® operation during light loads. The EVAL-LTC7893-AZ is set to 500kHz switching frequency, which results in a small and efficient circuit.
Eigenschaften
GaN Drive Technology Fully Optimized for GaN FETsOutput Voltage Up to 100VWide VIN Range: 4V to 60V and Operates Down to 1V after Start-UpNo Catch, Clamp, or Bootstrap Diodes NeededInternal Smart Bootstrap Switches Prevent Overcharging of High-Side Driver SupplyResistor-Adjustable Dead TimesSplit-Output Gate Drivers for Adjustable Turn On and Turn Off Driver StrengthsAccurate Adjustable Driver Voltage and UVLOLow Operating IQ: 15μAProgrammable Frequency (100kHz to 3MHz)Synchronizable Frequency (100kHz to 3MHz)Spread Spectrum Frequency Modulation28-Lead (4mm × 5mm), Side Wettable, QFN PackageAEC-Q100 Qualified for Automotive Applications
Typische Anwendungen
- Telecommunications Power Systems
- Medical Systems
- Automotive and Industrial Power Systems
- Military Avionics
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | fres(MHz) | Drahttype | L(mm) | Ti | Ø OD(mm) | Ø ID(mm) | Verpackung | VPE | Pins | Typ | Montageart | H(mm) | IR(A) | Arbeitsspannung(V (AC)) | Betriebstemperatur | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCF SMT-Hochstrominduktivität, 3.1 µH, 33.15 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCF SMT-Hochstrominduktivität | Induktivität3.1 µH | Performance Nennstrom33.15 A | Sättigungsstrom 141 A | Sättigungsstrom @ 30%45 A | Gleichstromwiderstand2.3 mΩ | Eigenresonanzfrequenz29 MHz | DrahttypeFlach | Länge20.8 mm | – | – | – | – | Verpackungseinheit100 | Pins2 | – | MontageartSMT | Höhe13.5 mm | Nennstrom26 A | – | Betriebstemperatur -40 °C up to +125 °C | ||||
 | WA-SMSI SMT Stahl Spacer mit Innengewinde M2, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWA-SMSI SMT Stahl Spacer mit Innengewinde M2 | – | – | – | – | – | – | – | Länge1 mm | InnengewindeM2 | Außendurchmesser4.35 mm | Innendurchmesser2.8 mm | VerpackungTape and Reel | Verpackungseinheit1500 | – | – | – | – | – | – | Betriebstemperatur -55 °C up to +150 °C | |||
 | WR-PHD Stiftleisten, –, – | Simulation– | Downloads7 Dateien | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten | – | – | – | – | – | – | – | Länge6 mm | – | – | – | VerpackungBeutel | Verpackungseinheit1000 | Pins6 | TypGerade | MontageartTHT | – | Nennstrom2 A | Arbeitsspannung200 V (AC) | Betriebstemperatur -40 °C up to +105 °C |