| Topologie | Gegentaktwandler (Halbbrücken) |
| Eingangsspannung | 100 V |
| Schaltfrequenz | 100-10000 kHz |
| Ausgang 1 | 100 V |
The LT8418 is a 100V half-bridge GaN driver that integrates top and bottom driver stages, driver logic control, and protections. It can be configured into synchronous half-bridge, full-bridge topologies, or buck, boost, and buck-boost topologies. The LT8418 provides strong current sourcing/sinking capability with 0.6Ω pull-up and 0.2Ω pull-down resistance. It also integrates smart integrated bootstrap switch to generate a balanced bootstrap voltage from VCC with a minimum dropout voltage.The LT8418 provides split gate drivers to adjust the turn-on and turn-off slew rates of GaN FETs to suppress ringing and optimize EMI performance. All driver inputs and outputs have default low-state to prevent GaN FETs from false turn-on. The inputs of the LT8418, INT, and INB are independent and TTL logic compatible. Meanwhile, the LT8418 performs with a fast propagation delay of 10ns and maintains an excellent delay matching of 1.5ns between the top and bottom channels, making it suitable for high-frequency DC-DC converters, motor drivers, and class-D audio amplifiers. In addition, the LT8418 employs the WLCSP package to minimize parasitic inductance, enabling its wide use in high-performance and high-power density applications.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | fres(MHz) | Drahttype | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-HCF SMT-Hochstrominduktivität, 3.1 µH, 33.15 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCF SMT-Hochstrominduktivität | Induktivität3.1 µH | Performance Nennstrom33.15 A | Sättigungsstrom 141 A | Sättigungsstrom @ 30%45 A | Gleichstromwiderstand2.3 mΩ | Eigenresonanzfrequenz29 MHz | DrahttypeFlach |