IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (140)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (267)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (337)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (97)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (58)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Details
| Topologie | Aufwärtswandler |
| Eingangsspannung | 10-36 V |
| Ausgang 1 | 48 V / 1 A |
Beschreibung
Demo circuit 2628A features the LT®8362 in boost configuration.The converter is designed to convert a 10V to 36Vsource to 48V at 280mA to 1000mA, depending on inputvoltage, and with a switching frequency of 2MHz. Pleaserefer to Figure 4 for load current versus input voltage.The demo board contains a selectable jumper, JP1, whichmakes it easy to select any desired “Sync” mode of operation.The default setting is “Burst”.The LT8362 can operate with inputs as high as 60V, howeverin this demo circuit, the input is limited by the levelof the output voltage.This layout is optimized for good “EMI” performance andsolution size. Input and output filters and a “Hot Loop”, comprised of C11 and C12 are necessary to pass CISPR25Class 5 emissions, and are added by default. These componentscan be excluded in applications not requiringnoise immunity. Radiated emissions plots are includedin this manual.The data sheet gives a complete description of the device,operation and application information. The data sheetmust be read in conjunction with this demo manual forDC2628A.
Eigenschaften
PJ17US002901
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | fres(MHz) | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(mΩ) | Typ | Pins | Montageart | L(mm) | H(mm) | IR(mA) | Arbeitsspannung(V (AC)) | Betriebstemperatur | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-LHMI SMT Speicherdrossel, 6.8 µH, 2.35 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | Induktivität6.8 µH | Performance Nennstrom2.35 A | Sättigungsstrom 12.4 A | Sättigungsstrom @ 30%4.75 A | Eigenresonanzfrequenz29 MHz | – | – | – | – | Gleichstromwiderstand172 mΩ | – | Pins2 | MontageartSMT | Länge4.45 mm | Höhe1.8 mm | – | – | Betriebstemperatur -40 °C up to +125 °C | ||||
 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | – | – | Impedanz @ 100 MHz600 Ω | Maximale Impedanz700 Ω | Maximale Impedanz150 MHz | Nennstrom 22000 mA | Gleichstromwiderstand150 mΩ | TypHochstrom | – | MontageartSMT | Länge2 mm | Höhe0.0009 mm | Nennstrom1500 mA | – | Betriebstemperatur -55 °C up to +125 °C | ||||
 | WR-PHD Kurzschlussbrücken, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Kurzschlussbrücken | – | – | – | – | – | – | – | – | – | – | – | Pins2 | – | – | – | Nennstrom3000 mA | Arbeitsspannung200 V (AC) | Betriebstemperatur -25 °C up to +105 °C |