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Details
| Topologie | Aufwärtswandler |
| Eingangsspannung | 4.5-10 V |
| Schaltfrequenz | 300-3000 kHz |
| Ausgang 1 | 12 V / 1.5 A |
Beschreibung
The LT8337/LT8337-1 is a low IQ, synchronous step-up DC/DC converter. It features Silent Switcher architecture and optional spread spectrum frequency modulation (SSFM) to minimize EMI emissions while delivering high efficiencies at high switching frequencies.The wide input/output voltage range, low VIN pin quiescent current in Burst Mode operation, and 100% duty-cycle capability for the synchronous MOSFET in PassThru operation (VIN > VOUT) makes the LT8337/LT8337-1 ideally suited for battery-powered systems and general purpose step-up applications.The LT8337/LT8337-1 integrates 28V, 5A power switches, operating at a fixed switching frequency programmable between 300kHz and 3MHz and synchronizable to an external clock. The LT8337/LT8337-1 features output soft-start and output overvoltage lockout.The LT8337-1 allows external compensation via the VC pin for fast transient response. The LT8337 offers an output power good flag via the PG pin.
Eigenschaften
- Silent Switcher® Architecture
- Ultralow EMI Emissions
- Optional Spread Spectrum Frequency Modulation
- Integrated 28V, 5A Power Switches
- Wide Input Voltage Range: 2.7V to 28V
- Output Voltage Programmable Up to 26V
- Low VIN Pin Quiescent Current
- 0.3μA in Shutdown
- 4μA in Burst Mode® Operation (LT8337)
- 15μA in PassThru™ (LT8337)
- 100% Duty Cycle Capability for Synchronous MOSFET
- External Compensation: Fast Transient Response (LT8337-1)
- Power Good Monitor (LT8337)
- Adjustable and Synchronizable: 300kHz to 3MHz
- Pulse-Skipping or Burst Mode Operation at Light Load
- Small 16-Lead (3mm × 3mm) LQFN Package
Typische Anwendungen
- Battery-Powered Systems, General Purpose Step-Up
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IR(A) | ISAT1(A) | ISAT2(A) | fres(MHz) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | VOP(V) | Montageart | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(mΩ) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-PMCI Power Molded Chip Induktivität, 0.25 µH, 9.05 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PMCI Power Molded Chip Induktivität | Induktivität0.25 µH | Nennstrom9.05 A | Sättigungsstrom 18.5 A | Sättigungsstrom 215.65 A | Eigenresonanzfrequenz150 MHz | Performance Nennstrom9.05 A | Sättigungsstrom @ 30%15.65 A | Gleichstromwiderstand26 mΩ | – | MontageartSMT | – | – | – | Nennstrom 24000 mA | Gleichstromwiderstand31 mΩ | – | ||||
 | WE-MAPI SMT-Speicherdrossel, 1.5 µH, 6.2 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität1.5 µH | Nennstrom6.2 A | – | – | Eigenresonanzfrequenz48 MHz | Performance Nennstrom8.2 A | Sättigungsstrom @ 30%11 A | Gleichstromwiderstand17.1 mΩ | Betriebsspannung80 V | MontageartSMT | – | – | – | – | Gleichstromwiderstand20 mΩ | – | ||||
 | WE-CBF SMT-Ferrit, –, 1.5 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | Nennstrom1.5 A | – | – | – | – | – | – | – | MontageartSMT | Impedanz @ 100 MHz600 Ω | Maximale Impedanz700 Ω | Maximale Impedanz150 MHz | Nennstrom 22000 mA | Gleichstromwiderstand150 mΩ | TypHochstrom |