| Topologie | SEPIC Buck-Boost Topologie |
| Eingangsspannung | 2.8-28 V |
| Schaltfrequenz | 300-2000 kHz |
| Ausgang 1 | 5 V / 3.3 A |
The LT®8334 is a current mode DC/DC converter with a 40V, 5A switch operating from a 2.8V to 40V input. With a unique single feedback pin architecture, it is capable of boost, SEPIC or inverting configurations. Burst Mode operation consumes as low as 9μA quiescent current to maintain high efficiency at very low output currents, while keeping typical output ripple below 15mV.An external compensation pin allows optimization of loop bandwidth over a wide range of input and output volt-ages and programmable switching frequencies between 300kHz and 2MHz. A SYNC/MODE pin allows synchroni-zation to an external clock. It can also be used to select between BURST or PULSE SKIP modes of operation with spread spectrum frequency modulation for low EMI. For increased efficiency, a BIAS pin can accept a second input to supply the INTVCC regulator. Additional features include frequency foldback and programmable soft-start to con-trol inductor current during start-up.The LT8334 is available in a thermally enhanced 12-lead 4mm × 3mm DFN package
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(Ω) | Typ | L1(µH) | L2(µH) | IR 1(mA) | ISAT 1(A) | RDC1 typ(Ω) | RDC2 typ(Ω) | RDC1 max(Ω) | RDC2 max(Ω) | fres(MHz) | Muster | |
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![]() | WE-CBF SMT-Ferrit, 785 Ω, 1300 Ω | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | Impedanz @ 100 MHz785 Ω | Maximale Impedanz1300 Ω | Maximale Impedanz60 MHz | Nennstrom 23000 mA | Gleichstromwiderstand0.05 Ω | TypHochstrom | – | – | Nennstrom 12000 mA | – | – | – | – | – | – | ||||
![]() | WE-DD SMT-Doppeldrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-DD SMT-Doppeldrossel | – | – | – | Nennstrom 24400 mA | Gleichstromwiderstand0.035 Ω | TypGerade | Induktivität 11.3 µH | Induktivität 21.3 µH | Nennstrom 14400 mA | Sättigungsstrom [1]6.3 A | Gleichstromwiderstand 10.027 Ω | Gleichstromwiderstand 20.027 Ω | Gleichstromwiderstand 10.035 Ω | Gleichstromwiderstand 20.035 Ω | Eigenresonanzfrequenz60 MHz |