| Topologie | Abwärtswandler |
| Eingangsspannung | 2.15-6.5 V |
| Ausgang 1 | 1.8 V |
The ADP5304 is a high efficient, ultralow quiescent current step-down regulator that draws only 260 nA of quiescent current to regulate the output at no load. The ADP5304 runs from an input voltage range of 2.15 V to 6.50 V, allowing the use of the multiple alkaline, NiMH, andLithium cells, or the use of a high impedance power source. Theoutput voltage is selectable from 0.8 V to 5.0 V by an externalVID resistor to ground. The total solution requires only four tiny external components.The ADP5304 operates in hysteresis mode via connecting the MODE pin to ground. In hysteresis mode, the regulatorachieves excellent efficiency at a power of less than 1 mW andprovides up to 50 mA of output load. The device enables very efficient power management to achieve the collection of smallamounts of energy from the high impedance battery or the energy harvester to charge up the conventional capacitor or super capacitor. The ADP5304 integrates an ultralow power comparator with a factory programmable voltage reference to monitor the voltageof the input power source. The voltage reference, with hysteresis, is the threshold for the stopping and the starting of the switching, allowing the use of the high impedance power source.Other key features of the ADP5304 include separate enabling and a QOD. Safety features, such as OCP, TSD, and inputUVLO are also included. The ADP5304 is available in 10-lead, 3 mm × 3 mm LFCSPpackage rated for the −40°C to +125°C junction temperature range.
Artikel Nr. | Datenblatt | Ersatzartikel | Simulation | Downloads | Status | Produktserie | L(µH) | IR 1(mA) | IR 2(mA) | ISAT(mA) | RDC(mΩ) | fres(MHz) | Typ | H(mm) | B(mm) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | VOP(V) | Montageart | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-PMI Power-Multilayer-Induktivität, 2.2 µH, 900 mA | 74479887222A | Simulation– | Downloads– | Status PTNi| Die Produktion wird demnächst eingestellt. Erwartete Lebenszeit: <2 Jahre. | ProduktserieWE-PMI Power-Multilayer-Induktivität | Induktivität2.2 µH | Nennstrom 1900 mA | Nennstrom 21300 mA | Sättigungsstrom1700 mA | Gleichstromwiderstand250 mΩ | Eigenresonanzfrequenz50 MHz | TypHoher Sättigungsstrom | Höhe1.2 mm | Breite2 mm | – | – | – | – | MontageartSMT | – | |
![]() | WE-MAPI SMT-Speicherdrossel, 2.2 µH, – | – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität2.2 µH | – | – | Sättigungsstrom5000 mA | – | Eigenresonanzfrequenz50 MHz | – | Höhe1.2 mm | Breite3 mm | Performance Nennstrom2.9 A | Sättigungsstrom @ 30%6.1 A | Gleichstromwiderstand100 mΩ | Betriebsspannung80 V | MontageartSMT |