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WE-AGDT Auxiliary Gate Drive Transformer EXTENDED

for SiC-MOSFET and IGBT

 Size Dimen­sions 3DL
(mm)
W
(mm)
H
(mm)
Mount
EXT. EP7 11.3 10.95 11.94 SMT

Characteristics

  • Interwinding capacitance down to 6.8 pF
  • Tiny surface mount EP7 package
  • Dielectric insulation up to 4 kV AC
  • Basic insulation for 568 Vrms / 800 Vpk
  • Safety: IEC62368-1 / IEC61558-2-16
  • AEC-Q200 qualification
  • Operating temperature: -40 °C up to +130 °C
  • Common control voltages for SiC MOSFET’s
  • High Common-mode Transient Immunity (CMTI)
  • Flyback with primary side regulation
  • Up to 6 W output power
  • Wide range input voltages 9 V to 36 V
  • Different unipolar and bipolar voltages
  • High efficiency and very compact solution
  • Reference designs with Analog Devices and Texas Instruments

Applications

  • Industrial drives
  • AC motor inverters
  • HEV/EV charging station
  • Battery chargers
  • Solar inverters
  • Data centers
  • Uninterruptible power supplies
  • Active power factor correction
  • SiC-MOSFET based power converter

Products

EP7
Order Code Data­sheet Simu­lation DownloadsVIN
(V)
VOut1
(V)
VOut2
(V)
CWW 1
(pF)
fswitch
(kHz)
PO
(W)
IC ReferenceIC Reference Samples
NEW750318131SPEC
8 files 9 - 18 15 -4 7.5 350 6 LT8302ADI Power by Linear
NEW750318114SPEC
8 files 9 - 18 19 6.8 350 6 LT8302ADI Power by Linear
NEW750317894SPEC
8 files 9 - 18 15 -4 7 350 3 LM5180Texas Instruments
NEW750317893SPEC
8 files 9 - 18 19 6.8 350 3 LM5180Texas Instruments
NEW750318208SPEC
8 files 18 - 36 15 -4 7 350 5 LM5180Texas Instruments
NEW750318207SPEC
8 files 18 - 36 19 8.2 350 5 LM5180Texas Instruments
Order Code Data­sheet Simu­lation
NEW750318131SPEC
NEW750318114SPEC
NEW750317894SPEC
NEW750317893SPEC
NEW750318208SPEC
NEW750318207SPEC
Samples
Order Code Data­sheet Simu­lation DownloadsVIN
(V)
VOut1
(V)
VOut2
(V)
CWW 1
(pF)
fswitch
(kHz)
PO
(W)
IC ReferenceIC Reference Samples

WE AGDT – Compact Power Supply SMT Transformer for SiC-MOSFET’s

Drive hard. Drive safe.

Auxiliary Gate Drive Transformer

The WE-AGDT series from Würth Elektronik allows implementing discrete SiC gate driver designs easier than ever before. These standard parts are compact SMT transformers optimized for silicon carbide applications. With extremely low interwinding capacitance, the WE-AGDT helps to achieve higher Common Mode Transient Immunity (CMTI).

The series is compliant with safety standards according to IEC62368-1 / IEC61558-2-16 in addition to AEC-Q200 qualification. Reference designs are available for each WE-AGDT transformer. The complete solution is compact and capable of fully automated assembly.

Impact of Interwinding Capacitance

Importance of minimizing displacement current / common-mode current

SiC-MOSFETs can switch extremely fast, causing very high rates of rise and fall of voltage (dv/dt) across the device terminals and in turn, across the isolation barrier parasitic capacitances, which are a contribution of the transformer in the auxiliary supply (Ciso-xfmr) and the gate driver IC controller or digital isolator used (Ciso-drv).

As a result, common-mode displacement currents are generated which, if high enough, may cause loss of control of the SiC-MOSFET device as well as EMI issues, since high dv/dt also appears across PCB nodes and Earth/Chassis. The lower the parasitic capacitance, the lower the displacement currents generated, helping to prevent such issues.

Compared to regular transformers

The WE-AGDT transformers have been engineered with extremely-low interwinding capacitance in order to help the application withstand higher switching speeds (dv/dt), and with it to achieve higher efficiency as well as a smaller solution size and lower system cost.

Compared to regular, same-sized transformers, the WE-AGDT feature less than half of the parasitic capacitance, as required by state-of-the-art SiC-MOSFET and IGBT applications.

SiC Gate Driver System

One of the main applications of high-voltage SiC-MOSFETs and IGBTs is in high-power AC inverters and AC-Motor drives. Such power stages are built by ‘paralleling’ several half-bridge configurations of SiC devices in order to generate the different phase currents and voltages for the load.

Each of the SiC-MOSFET devices typically has its own isolated gate driver system formed by the gate driver IC and the auxiliary supply (e.g. Würth Elektronik RD001 reference design with WE-AGDT).

A simplified schematic of an example application of a 3-phase inverter formed by three half-bridge stages paralleled and six SiC-MOSFET devices in total is shown in the image, in addition to a detail connection of the isolated auxiliary supply, isolated gate driver IC and the corresponding SiC-MOSFET device.