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Details
| Topologie | Sonstige Topologie |
| IC-Revision | 1 |
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR(mA) | Z @ 1 GHz(Ω) | H(mm) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT-Hochstrominduktivität, 10 µH, 9.5 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität10 µH | Performance Nennstrom9.5 A | Sättigungsstrom 14 A | Sättigungsstrom @ 30%8.5 A | Gleichstromwiderstand16.3 mΩ | Eigenresonanzfrequenz21 MHz | MaterialSuperflux | – | – | – | – | – | Höhe4.7 mm | – | ||||
 | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | – | – | – | – | Impedanz @ 100 MHz550 Ω | Maximale Impedanz660 Ω | Maximale Impedanz300 MHz | Nennstrom4000 mA | Impedanz @ 1 GHz244 Ω | Höhe2 mm | TypHochstrom |