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Details
| Topologie | LLC Resonanzwandler |
Beschreibung
This design uses a Critical Conduction Mode (CrCM/DCM) PFC (AC-400 VDC), followed by an LLC DC-DC (400-19 VDC). For both stages, the switching frequency was increased to the maximum allowed by the off-the-shelf control ICs available. The board is designed to be a ‘demonstration’ board, and is not yet optimized as a production design. With this design, a power density of 2.18 W/cc or 35.75 W/in3 is achieved, which is around 2x typical and 40% more than the best-on-class Si-based design today. Customer designs are expected to achieve even higher power density. The PFC section is a standard ON Semi NCP1615 CrCM/DCM powering 2x NV6115 (parallel) GaNFast Power ICs directly. Critical mode PFC (also known as boundary mode) is a soft-switching topology which allows higher frequency operation. The DC-DC section uses the NCP13992 current-mode resonant controller (LLC) driving NV6115s. The NV6115s have monolithically-integrated gate drivers, so the NCP13992’s drivers are not used and loss is minimized.
Typische Anwendungen
- PFC
- LLC
All technical functions in detail
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | IR(A) | L(µH) | RDC max.(mΩ) | VR(V (AC)) | VT(V (AC)) | Material | L(mm) | B(mm) | H(mm) | Montageart | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT-Hochstrominduktivität, 6.25 A, 3.2 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Performance Nennstrom6.25 A | Sättigungsstrom 13.2 A | Sättigungsstrom @ 30%6.5 A | Gleichstromwiderstand34.5 mΩ | Eigenresonanzfrequenz18 MHz | – | Induktivität16 µH | Gleichstromwiderstand37.95 mΩ | – | – | MaterialSuperflux | Länge10.5 mm | Breite10.2 mm | Höhe4.7 mm | MontageartSMT | ||||
 | WE-CMBNC Stromkompensierte Netzdrossel Nanokristallin, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | – | – | – | – | – | Nennstrom5 A | Induktivität9000 µH | Gleichstromwiderstand32 mΩ | Nennspannung300 V (AC) | Prüfspannung2100 V (AC) | MaterialNanokristallin | Länge23 mm | Breite13.5 mm | Höhe26 mm | MontageartTHT | |||||
 | WE-FI Funkentstördrossel, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-FI Funkentstördrossel | – | – | – | – | – | Nennstrom2.5 A | Induktivität150 µH | Gleichstromwiderstand100 mΩ | – | – | – | Länge16.5 mm | Breite10.7 mm | – | MontageartTHT | |||
 | 750317229 | Transformer, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Produktserie Transformer | – | – | – | – | – | – | Induktivität190 µH | – | – | Prüfspannung3000 V (AC) | – | Länge26.5 mm | Breite32.1 mm | Höhe11 mm | MontageartTHT | ||
 | 750317297 | Inductor, –, – | Simulation– | Downloads4 Dateien | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Produktserie Inductor | – | – | – | – | – | – | Induktivität77.5 µH | – | – | Prüfspannung500 V (AC) | – | Länge26.5 mm | Breite31.2 mm | Höhe11 mm | MontageartTHT |
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Navitas Semiconductor Worlds First Fastest GaN Power IC