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Details
| Topologie | Sonstige Topologie |
| IC-Revision | 2014.08.25 |
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | ISAT(A) | fres(MHz) | Bauform | Version | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(mΩ) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-PD SMT-Speicherdrossel, 33 µH, 2.9 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität33 µH | Sättigungsstrom2.9 A | Eigenresonanzfrequenz11.1 MHz | Bauform1050 | VersionPerformance | – | – | – | – | Gleichstromwiderstand79 mΩ | – | ||||
 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | Bauform0603 | VersionSMT | Impedanz @ 100 MHz600 Ω | Maximale Impedanz800 Ω | Maximale Impedanz200 MHz | Nennstrom 21000 mA | Gleichstromwiderstand200 mΩ | TypHochstrom |