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WE-GDT Gate-Drive-Transformer
WE-GDT Gate-Drive-Transformer
n 2.5:1:1 to 1:1 ∫Udt 25.2 µVs to 70 Vµs
WE-GDTI Gate-Drive-Transformer
WE-GDTI Gate-Drive-Transformer
n 1:1:1 to 3:1:1 ∫Udt 99 to 140 µVs
WE-AGDT Auxiliary Gate Drive Transformer
WE-AGDT Auxiliary Gate Drive Transformer
n 3.5:3.5:1 to 1:1.29 ∫Udt 36 to 72 µVs
Order Code
Data­sheet
Simu­lation
Downloads
Status
n
∫Udt (µVs)
VT (V (DC))
CWW 1 (pF)
LS (µH)
Size
Product series
Reference Design
Samples
WE-GDT Gate-Drive-Transformer 1:1:1, 25.2 µVs, 1500 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1:1:1 
Voltage-µSecond 25.2 µVs
Insulation Test Voltage 1500 V (DC)
Interwinding Capacitance 9 pF
Leakage Inductance 1.7 µH
Size EP5 
Reference Design
WE-GDT Gate-Drive-Transformer 1:1, 30.2 µVs, 1500 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1:1 
Voltage-µSecond 30.2 µVs
Insulation Test Voltage 1500 V (DC)
Interwinding Capacitance 10 pF
Leakage Inductance 1.8 µH
Size EP5 
Reference Design
WE-GDT Gate-Drive-Transformer 1.5:1, 40.8 µVs, 1500 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1.5:1 
Voltage-µSecond 40.8 µVs
Insulation Test Voltage 1500 V (DC)
Interwinding Capacitance 9 pF
Leakage Inductance 2.9 µH
Size EP5 
Reference Design
WE-GDT Gate-Drive-Transformer 1:1:1, 102 µVs, 2500 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1:1:1 
Voltage-µSecond 102 µVs
Insulation Test Voltage 2500 V (DC)
Interwinding Capacitance 11 pF
Leakage Inductance 4 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 1:1, 102 µVs, 2500 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1:1 
Voltage-µSecond 102 µVs
Insulation Test Voltage 2500 V (DC)
Interwinding Capacitance 11 pF
Leakage Inductance 4 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 1.5:1:1, 99 µVs, 2500 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1.5:1:1 
Voltage-µSecond 99 µVs
Insulation Test Voltage 2500 V (DC)
Interwinding Capacitance 11 pF
Leakage Inductance 3.5 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 1:1:5:5, 28 µVs, 2100 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1:1:5:5 
Voltage-µSecond 28 µVs
Insulation Test Voltage 2100 V (DC)
Interwinding Capacitance 90 pF
Leakage Inductance 0.4 µH
Size 1210 
Reference Design
WE-GDT Gate-Drive-Transformer 1:1:2:2, 70 µVs, 2100 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1:1:2:2 
Voltage-µSecond 70 µVs
Insulation Test Voltage 2100 V (DC)
Interwinding Capacitance 100 pF
Leakage Inductance 1.5 µH
Size 1210 
Reference Design
WE-GDT Gate-Drive-Transformer 1:1.2, –, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1:1.2 
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 8.2 pF
Leakage Inductance 0.7 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 1:2, –, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1:2 
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 6.8 pF
Leakage Inductance 0.55 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 1:2, –, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1:2 
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 6.8 pF
Leakage Inductance 0.5 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 1:1.67, 36 µVs, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1:1.67 
Voltage-µSecond 36 µVs
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 0.68 pF
Leakage Inductance 0.55 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 1.56:3.89:1:1:1, –, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1.56:3.89:1:1:1 
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 6.4 pF
Leakage Inductance 1 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 1:1, 60 µVs, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1:1 
Voltage-µSecond 60 µVs
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 1.3 pF
Leakage Inductance 1.5 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 1.2:2:1, –, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1.2:2:1 
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 3.25 pF
Leakage Inductance 0.24 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 1:2, 72 µVs, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1:2 
Voltage-µSecond 72 µVs
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 2.1 pF
Leakage Inductance 3 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 1.8:3.6:1, –, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1.8:3.6:1 
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 7.3 pF
Leakage Inductance 0.5 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 1:1.57, 40 µVs, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1:1.57 
Voltage-µSecond 40 µVs
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 2 pF
Leakage Inductance 0.85 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 1.83:1, 64 µVs, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1.83:1 
Voltage-µSecond 64 µVs
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 2 pF
Leakage Inductance 1.9 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 1.2:1, 70 µVs, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1.2:1 
Voltage-µSecond 70 µVs
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 2 pF
Leakage Inductance 2.2 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 1:1.08, 70 µVs, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1:1.08 
Voltage-µSecond 70 µVs
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 2.6 pF
Leakage Inductance 2.25 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 1:1.29, 40 µVs, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1:1.29 
Voltage-µSecond 40 µVs
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 2.1 pF
Leakage Inductance 0.755 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 1:1, 28.7 µVs, 2000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 1:1 
Voltage-µSecond 28.7 µVs
Insulation Test Voltage 2000 V (DC)
Interwinding Capacitance 12 pF
Leakage Inductance 1.4 µH
Size ER9.5/5 
Reference Design
WE-GDT Gate-Drive-Transformer 2.5:1:1, 29.4 µVs, 1500 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 2.5:1:1 
Voltage-µSecond 29.4 µVs
Insulation Test Voltage 1500 V (DC)
Interwinding Capacitance 7 pF
Leakage Inductance 2.3 µH
Size EP5 
Reference Design
WE-GDT Gate-Drive-Transformer 2:1:1, 28.6 µVs, 1500 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 2:1:1 
Voltage-µSecond 28.6 µVs
Insulation Test Voltage 1500 V (DC)
Interwinding Capacitance 7 pF
Leakage Inductance 1.9 µH
Size EP5 
Reference Design
WE-GDT Gate-Drive-Transformer 2.5:1, 33.6 µVs, 1500 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 2.5:1 
Voltage-µSecond 33.6 µVs
Insulation Test Voltage 1500 V (DC)
Interwinding Capacitance 9 pF
Leakage Inductance 2.3 µH
Size EP5 
Reference Design
WE-GDT Gate-Drive-Transformer 2:1:1, 102 µVs, 2500 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 2:1:1 
Voltage-µSecond 102 µVs
Insulation Test Voltage 2500 V (DC)
Interwinding Capacitance 11 pF
Leakage Inductance 4 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 2.5:1:1, 120 µVs, 2500 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 2.5:1:1 
Voltage-µSecond 120 µVs
Insulation Test Voltage 2500 V (DC)
Interwinding Capacitance 11 pF
Leakage Inductance 5 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 2.25:3.5:1, –, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 2.25:3.5:1 
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 7.5 pF
Leakage Inductance 0.4 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 2.25:3.5:1, –, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 2.25:3.5:1 
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 7 pF
Leakage Inductance 0.6 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 2:2.86:1.43:1.43:1, –, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 2:2.86:1.43:1.43:1 
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 7.8 pF
Leakage Inductance 0.7 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 2.25:4.25:1, –, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 2.25:4.25:1 
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 7.5 pF
Leakage Inductance 0.5 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 2.2:1, 64 µVs, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 2.2:1 
Voltage-µSecond 64 µVs
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 2 pF
Leakage Inductance 1.9 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 3:1:1, 140 µVs, 2500 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 3:1:1 
Voltage-µSecond 140 µVs
Insulation Test Voltage 2500 V (DC)
Interwinding Capacitance 11 pF
Leakage Inductance 7.5 µH
Size EP7 
Reference Design
WE-GDT Gate-Drive-Transformer 3.5:3.5:1, –, 4000 V (DC)
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Turns Ratio 3.5:3.5:1 
Insulation Test Voltage 4000 V (DC)
Interwinding Capacitance 7 pF
Leakage Inductance 0.6 µH
Size EP7 
Reference Design