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Overview
| Topology | Other Topology |
| Input voltage | 24 V |
| IC revision | 1 |
Description
This design uses the TLP5231 pre-driver coupler, which is capable of high-current gate drive with external buffer MOSFETs and has various built-in protection functions to implement the isolated-gate drive of a high-current/high-voltage SiC MOSFET module. It consists of two channels, high-side and low-side, on a 62mm x 100mm board and can be installed on Toshiba dual MOSFET modules.
Features
Developed an isolated gate driver equipped with various protection functions for high-current / high-voltage SiC MOSFET modulesParameters are set assuming combination with our SiC MOSFET modules (MG400V2YMS3, MG600Q2YMS3, MG250YD2YMS3)Realized in the same size as our SiC MOSFET modules
Typical applications
- Inverter/Servo; Mega-solar Inverters
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | VIN(V) | VOut1(V) | VOut2(V) | PO(W) | CWW 1(pF) | L(µH) | ISAT(A) | fswitch(kHz) | n | Version | IC Reference | SamplesAvailability & Sample | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SPECWE-AGDT Auxiliary Gate Drive Transformer, 9 - 18, 20 V | Availability – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-AGDT Auxiliary Gate Drive Transformer | Input Voltage 9 - 18 | Output Voltage 120 V | Output Voltage 25 V | Total Output Power6 W | Interwinding Capacitance7.3 pF | Inductance7 µH | Saturation Current4.5 A | Switching Frequency 350 | Turns Ratio1.8:3.6:1 | VersionFlyback | IC ReferenceLT8302 | –Check availability |
Availability Forecast
WE item number Packaging unitsLead time
––– weeks
| Expected Availability | Opening inventory | Quantity |
|---|---|---|
| Current Availability | – | – |
There is no forecast for this quantity request.
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