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Details
| Topologie | Sonstige Topologie |
| Eingangsspannung | 24 V |
| IC-Revision | 1 |
Beschreibung
This design uses the TLP5231 pre-driver coupler, which is capable of high-current gate drive with external buffer MOSFETs and has various built-in protection functions to implement the isolated-gate drive of a high-current/high-voltage SiC MOSFET module. It consists of two channels, high-side and low-side, on a 62mm x 100mm board and can be installed on Toshiba dual MOSFET modules.
Eigenschaften
Developed an isolated gate driver equipped with various protection functions for high-current / high-voltage SiC MOSFET modulesParameters are set assuming combination with our SiC MOSFET modules (MG400V2YMS3, MG600Q2YMS3, MG250YD2YMS3)Realized in the same size as our SiC MOSFET modules
Typische Anwendungen
- Inverter/Servo; Mega-solar Inverters
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | Vin(V) | VOut1(V) | VOut2(V) | PO(W) | CWW 1(pF) | L(µH) | ISAT(A) | fswitch(kHz) | n | Version | IC-Referenz | MusterVerfügbarkeit & Muster | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SPECWE-AGDT Auxiliary Gate Drive Transformer, 9 - 18, 20 V | Verfügbarkeit – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-AGDT Auxiliary Gate Drive Transformer | Input Voltage 9 - 18 | Ausgangsspannung 120 V | Ausgangsspannung 25 V | Totale Ausgangsleistung6 W | Koppelkapazität7.3 pF | Induktivität7 µH | Sättigungsstrom4.5 A | Switching Frequency 350 | Übersetzungsverhältnis1.8:3.6:1 | VersionFlyback | IC-ReferenzLT8302 | –Verfügbarkeit prüfen |
Verfügbarkeitsprognose
WE Artikelnummer VerpackungseinheitenWiederbeschaffungszeit
––– Wochen
| Erwartete Verfügbarkeit | Eingehender Bestand | Menge |
|---|---|---|
| Aktuelle Verfügbarkeit | – | – |
Für diese Mengenanfrage gibt es keine Prognose.
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