Texas Instruments TPS53632G | Demoboard LMG5200POLEVM-10

Description

The LMG5200POLEVM-10 EVM is designed to evaluate the LMG5200 GaN power stage and theTPS53632G half-bridge point-of-load controller in a 48-V to 1-V application. This EVM implements the 48-V to 1-V converter as a single-stage hard-switched half-bridge with current-doubler rectifier. This topologyefficiently supports a high step-down ratio while providing significant output current and fast transientresponse.The TPS53632G controller uses a D-CAP+ hysteretic control architecture to achieve superior transientresponse. The TPS53632G is a variant of the TPS53632 controller, modified to support the half-bridgetopology used in this EVM.The LMG5200 is an 80-V, 10-A half-bridge power stage using gallium-nitride (GaN) transistors. GaN offerssuperior switching performance to traditional silicon MOSFETs due to its lack of reverse-recovery effectand reduced input and output capacitance. By using a GaN module, this application achieves highefficiency while operating in a hard-switched configuration.This EVM guide describes correct operation and measurement of the EVM, as well as the EVMconstruction and typical performance.

Features

The LMG5200POLEVM-10 has the following features and specifications:

• D-CAP+ high-performance hysteretic controller
• Input voltage from 36 V to 75 V
• Output voltage of 1 V, I2C dynamically configurable via I2C from 0.5 V to 1.5 V
• Output voltage slew rate of 24 to 48 mV/μs, resistor configurable
• Output current up to 50 A
• Switching frequency of 600 kHz, resistor settable from 400 kHz to 1 MHz
• Enable input, PGOOD output
• On-board 10-A dynamic load supports 10 A/μs slew rate
• Optional resistor-configurable load-line
• Output under-voltage and over-voltage protection
• Output over-current protection

More information

• Datasheet
• IC product information