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Texas Instruments TPS53632G | Demoboard LMG5200POLEVM-10

Using the LMG5200POLEVM-10A GaN 48V-1V Point-of-Load EVM

Overview

TopologyHalf-Bridge Converter symmetrical isolated
Input voltage10-60 V
Switching frequency400-1000 kHz
Output 15 V / 10 A
IC revisionA

Description

The LMG5200POLEVM-10 EVM is designed to evaluate the LMG5200 GaN power stage and theTPS53632G half-bridge point-of-load controller in a 48-V to 1-V application. This EVM implements the 48-V to 1-V converter as a single-stage hard-switched half-bridge with current-doubler rectifier. This topologyefficiently supports a high step-down ratio while providing significant output current and fast transientresponse.The TPS53632G controller uses a D-CAP+ hysteretic control architecture to achieve superior transientresponse. The TPS53632G is a variant of the TPS53632 controller, modified to support the half-bridgetopology used in this EVM.The LMG5200 is an 80-V, 10-A half-bridge power stage using gallium-nitride (GaN) transistors. GaN offerssuperior switching performance to traditional silicon MOSFETs due to its lack of reverse-recovery effectand reduced input and output capacitance. By using a GaN module, this application achieves highefficiency while operating in a hard-switched configuration.This EVM guide describes correct operation and measurement of the EVM, as well as the EVMconstruction and typical performance.

Features

The LMG5200POLEVM-10 has the following features and specifications:

  • D-CAP+ high-performance hysteretic controller
  • Input voltage from 36 V to 75 V
  • Output voltage of 1 V, I2C dynamically configurable via I2C from 0.5 V to 1.5 V
  • Output voltage slew rate of 24 to 48 mV/μs, resistor configurable
  • Output current up to 50 A
  • Switching frequency of 600 kHz, resistor settable from 400 kHz to 1 MHz
  • Enable input, PGOOD output
  • On-board 10-A dynamic load supports 10 A/μs slew rate
  • Optional resistor-configurable load-line
  • Output under-voltage and over-voltage protection
  • Output over-current protection

Parts approved by Texas Instruments

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Order Code
Data­sheet
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Downloads
Status
Product series
λDom typ.(nm)
Emitting Color
λPeak typ.(nm)
IV typ.(mcd)
VF typ.(V)
Chip Technology
50% typ.(°)
L(nH)
LR(nH)
IR(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
SamplesAvailability & Sample
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SPECWL-SMCW SMT Mono-color Chip LED Waterclear, 525 nm, Green
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Status
ActiveProduction is active. Expected lifetime: >10 years.
iProduction is active. Expected lifetime: >10 years.
Dominant Wavelength [typ.]525 nm
Emitting ColorGreen 
Peak Wavelength [typ.]515 nm
Luminous Intensity [typ.]430 mcd
Forward Voltage [typ.]3.2 V
Chip TechnologyInGaN 
Viewing Angle Phi 0° [typ.]140 °
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SPECWE-HCM SMT High Current Flat Wire Inductor, –, –

PCN pending

Due to a pending PCN there will be a new datasheet revision issued for this order code soon. Please find the actual as well based on valid PCN date the new revision datasheet below. If you have further questions please get in contact with our sales staff.

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Availability
Status
ActiveProduction is active. Expected lifetime: >10 years.
iProduction is active. Expected lifetime: >10 years.
Inductance250 nH
Rated Inductance246 nH
Rated Current25 A
Saturation Current @ 10%41.6 A
Saturation Current @ 30%46.5 A
DC Resistance0.37 mΩ
Self Resonant Frequency40 MHz
MaterialMnZn 
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