| Topology | Other Topology |
| Switching frequency | 363-517 kHz |
| IC revision | E4 |
This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC grid-tie inverter stage.Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching loss ensures higher DC bus voltages of up to 1000V and lower switching losses with a peak efficiency of 99 percent. This design is configurable to work as a two-level or three-level inverter.The system is controlled by a single C2000 microcontroller (MCU), TMS320F28379D, which generates PWM waveforms for all power electronic switching devices under all operating modes.
Order Code | Datasheet | Simulation | Downloads | Status | Product series | C | Tol. C | VR(V (DC)) | Size | Operating Temperature | DF(%) | RISO | Ceramic Type | L(mm) | W(mm) | H(mm) | Fl(mm) | Packaging | VIN | VOut1(V (DC)) | IOut1(A) | Type of Insulation | fswitch(kHz) | ∫Udt(Vµs) | NPRI : NSEC | L(µH) | VT(V (RMS)) | Mount | Samples | |
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| WCAP-CSGP MLCCs 50 V(DC), 100 nF, ±10% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 50 V(DC) | Capacitance100 nF | Capacitance±10% | Rated Voltage50 V (DC) | Size0603 | Operating Temperature -55 °C up to +125 °C | Dissipation Factor3 % | Insulation Resistance5 GΩ | Ceramic TypeX7R Class II | Length1.6 mm | Width0.8 mm | Height0.8 mm | Pad Dimension0.4 mm | Packaging7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | |||||
![]() | WE-PPTI Push-Pull Transformers, –, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-PPTI Push-Pull Transformers | – | – | – | Size1209 | Operating Temperature -40 °C up to +125 °C | – | – | – | Length9.14 mm | Width12.7 mm | Height7.62 mm | – | PackagingTape and Reel | Input Voltage 5 V (DC) | Output Voltage 15 V (DC) | Output Current 10.65 A | Type of InsulationReinforced | Switching Frequency 300 - 620 | Voltage-µSecond10 Vµs | Turns Ratio1:1.3 | Inductance340 µH | Insulation Test Voltage5000 V (RMS) | MountSMT |