IC manufacturers Texas Instruments

IC manufacturers (103)

Texas Instruments LMG3411R150 | Demoboard PMP21639

600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection

Overview

TopologyFlyback Converter
Input voltage85-265 V
Output 120 V / 3.25 A
IC revisionD2

Description

The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.The LMG341xR150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero VDS ringing, less than 100-ns current limiting response self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

Features

  • TI GaN process qualified through accelerated reliability in-application hard-switching profiles
  • Enables high-density power conversion designs
  • Superior system performance over cascode or stand-alone GaN FETs
  • Low inductance 8 mm × 8 mm QFN package for ease of design and layout
  • Adjustable drive strength for switching performance and EMI control
  • Digital fault status output signal
  • Only +12 V of unregulated supply needed
  • Integrated gate driver
  • Zero common source inductance
  • 20-ns propagation delay for high-frequency design
  • Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
  • 25-V/ns to 100-V/ns adjustable slew rate
  • Robust protection
  • Requires no external protection components
  • Overcurrent protection with <100 ns response
  • Greater than 150-V/ns slew rate immunity
  • Transient overvoltage immunity
  • Overtemperature protection
  • Undervoltage lockout (UVLO) protection on all supply rails
  • Device Options:
  • LMG3410R150: Latched overcurrent protection
  • LMG3411R150: Cycle-by-cycle overcurrent protection

Typical applications

  • Mobile wall charger design

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
Interface Type
Type
Gender
Pins
Mount
PCB Thickness(mm)
Working Voltage(V (DC))
Packaging
L(µH)
IR(A)
RDC max.(Ω)
Samples
WE-FI Leaded Toroidal Line Choke, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
MountTHT 
Inductance32 µH
Rated Current2.6 A
DC Resistance0.045 Ω
WE-HCI SMT Flat Wire High Current Inductor, 14.8 A, 5.5 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Performance Rated Current14.8 A
Saturation Current @ 10%5.5 A
Saturation Current @ 30%11.5 A
DC Resistance4.75 mΩ
Self Resonant Frequency158 MHz
MaterialSuperflux 
Pins
MountSMT 
Inductance1 µH
DC Resistance0.005225 Ω
WR-USB Type C Connectors, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Interface TypeType C 
TypeHorizontal 
GenderReceptacle 
Pins24 
MountTHR 
PCB Thickness1.6 mm
Working Voltage48 V (DC)
PackagingTape and Reel 
Rated Current5 A
750318662
Offline Transformer, –, –
Simu­lation
Downloads
Status Activei| Production is active. Expected lifetime: >10 years.
Product series Offline Transformer