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reference designLMG1210 | Demoboard TIDA-01634

Texas Instruments LMG1210 | Demoboard TIDA-01634

Multi-MHz GaN Power Stage Reference Design for High-Speed DC/DC Converters

Overview

TopologyBuck Converter
Input voltage0-60 V
Switching frequency100-50000 kHz
Output 15 A
IC revision1

Description

This reference design implements a multi-MHz power stage design based on the LMG1210 half-bridge GaN driver and GaN power High Electron Mobility Transistors (HEMTs). With highly efficient switches and flexible dead-time adjustment, this design can significantly improve power density while achieving good efficiency as well as wide control bandwidth. This power stage design can be widely applied to many space-constrained and fast response required applications such as 5G telecom power, servers, and industrial power supplies.

Features

  • Compact GaN-Based Power Stage Design With Switching up to 50 MHz
  • Independent PWM inputs for high side and low side, or single PWM input with adjustable dead time
  • Minimum pulse width of 3 ns
  • High slew rate immunity of 300 V/ns
  • Driver UVLO and overtermpertaure protection

Typical applications

  • Class-D Audio Amplifiers
  • High-Speed DC-DC Converters / Class-E Wireless Charging
  • RF Envelope Tracking
  • Server and Network Power Supplies

More information

Products

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Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
C
Tol. C
VR(V (DC))
Size
Operating Temperature
DF(%)
RISO
Ceramic Type
L(mm)
W(mm)
H(mm)
Fl(mm)
Packaging
L(µH)
IRP,40K(A)
ISAT,30%(A)
RDC typ.(mΩ)
fres(MHz)
VOP(V)
Mount
SamplesAvailability & Sample
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885012208069
SPECWCAP-CSGP MLCCs 25 V(DC), 10 µF, ±10%
Simu­lation
Availability
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Downloads9 files

Status Activei| Production is active. Expected lifetime: >10 years.
Product seriesWCAP-CSGP MLCCs 25 V(DC)
Capacitance10 µF
Capacitance±10% 
Rated Voltage25 V (DC)
Size1206 
Operating Temperature -55 °C up to +125 °C
Dissipation Factor10 %
Insulation Resistance0.01 GΩ
Ceramic TypeX7R Class II 
Length3.2 mm
Width1.6 mm
Height1.6 mm
Pad Dimension0.5 mm
Packaging7" Tape & Reel 
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74438357010
SPECWE-MAPI SMT Power Inductor, –, –

PCN pending

Due to a pending PCN there will be a new datasheet revision issued for this order code soon. Please find the actual as well based on valid PCN date the new revision datasheet below. If you have further questions please get in contact with our sales staff.

Simu­lation
Availability
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Downloads10 files

Status Activei| Production is active. Expected lifetime: >10 years.
Product seriesWE-MAPI SMT Power Inductor
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Size4030 
Operating Temperature -40 °C up to +125 °C
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Length4.3 mm
Width4.3 mm
Height3.1 mm
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Inductance1 µH
Performance Rated Current10.25 A
Saturation Current @ 30%12.5 A
DC Resistance11.6 mΩ
Self Resonant Frequency59 MHz
Operating Voltage80 V
MountSMT 
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