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Texas Instruments LMG1210 | Demoboard TIDA-01634
Multi-MHz GaN Power Stage Reference Design for High-Speed DC/DC Converters
Overview
| Topology | Buck Converter |
| Input voltage | 0-60 V |
| Switching frequency | 100-50000 kHz |
| Output 1 | 5 A |
| IC revision | 1 |
Description
This reference design implements a multi-MHz power stage design based on the LMG1210 half-bridge GaN driver and GaN power High Electron Mobility Transistors (HEMTs). With highly efficient switches and flexible dead-time adjustment, this design can significantly improve power density while achieving good efficiency as well as wide control bandwidth. This power stage design can be widely applied to many space-constrained and fast response required applications such as 5G telecom power, servers, and industrial power supplies.
Features
- Compact GaN-Based Power Stage Design With Switching up to 50 MHz
- Independent PWM inputs for high side and low side, or single PWM input with adjustable dead time
- Minimum pulse width of 3 ns
- High slew rate immunity of 300 V/ns
- Driver UVLO and overtermpertaure protection
Typical applications
- High-Speed DC-DC Converters / Class-E Wireless Charging
- RF Envelope Tracking
- Class-D Audio Amplifiers
- Server and Network Power Supplies
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | C | Tol. C | VR(V (DC)) | Size | Operating Temperature | DF(%) | RISO | Ceramic Type | L(mm) | W(mm) | H(mm) | Fl(mm) | Packaging | L(µH) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | fres(MHz) | VOP(V) | Mount | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 25 V(DC), 10 µF, ±10% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 25 V(DC) | Capacitance10 µF | Capacitance±10% | Rated Voltage25 V (DC) | Size1206 | Operating Temperature -55 °C up to +125 °C | Dissipation Factor10 % | Insulation Resistance0.01 GΩ | Ceramic TypeX7R Class II | Length3.2 mm | Width1.6 mm | Height1.6 mm | Pad Dimension0.5 mm | Packaging7" Tape & Reel | – | – | – | – | – | – | – | |||||
 | WE-MAPI SMT Power Inductor, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MAPI SMT Power Inductor | – | – | – | Size4030 | Operating Temperature -40 °C up to +125 °C | – | – | – | Length4.3 mm | Width4.3 mm | Height3.1 mm | – | – | Inductance1 µH | Performance Rated Current10.25 A | Saturation Current @ 30%12.5 A | DC Resistance11.6 mΩ | Self Resonant Frequency59 MHz | Operating Voltage80 V | MountSMT |