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Overview
| Topology | Buck-Boost Converter |
| Input voltage | 100 V |
| Switching frequency | 100-15000 kHz |
| Output 1 | 10 A |
Description
The LMG1210EVM-012 is designed to evaluate the LMG1210 Megahertz 200V half-bridge driver for GaN FETs. This EVM consists on two Gallium Nitride FETs configured in a half-bridge, driven by a single LMG1210. No controller is present on the board.
Features
- Demonstrates high frequency capability of driver
- Demonstrates high CMTI withstand of the driver
- Demonstrates the excellent propagation and matching and strength of the driver
- Demonstrates the dead-time block functionaliy and the positive impact on efficiency
- This is a PCB (hardware), which is orderable and demonstrates the driver stage for a laser to be used in classD audio, Envelope Tracking and high-frequency DCDC applications.
Typical applications
- High-speed DC-DC converters
- High-precision motor control
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | C | Tol. C | VR(V (DC)) | Size | Operating Temperature | DF(%) | RISO | Ceramic Type | L(mm) | W(mm) | H(mm) | Fl(mm) | Packaging | Samples |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 25 V(DC), 10 µF, ±10% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 25 V(DC) | Capacitance10 µF | Capacitance±10% | Rated Voltage25 V (DC) | Size1206 | Operating Temperature -55 °C up to +125 °C | Dissipation Factor10 % | Insulation Resistance0.01 GΩ | Ceramic TypeX7R Class II | Length3.2 mm | Width1.6 mm | Height1.6 mm | Pad Dimension0.5 mm | Packaging7" Tape & Reel |