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Details
| Topologie | Abwärts- und Aufwärtswandler |
| Eingangsspannung | 100 V |
| Schaltfrequenz | 100-15000 kHz |
| Ausgang 1 | 10 A |
Beschreibung
The LMG1210EVM-012 is designed to evaluate the LMG1210 Megahertz 200V half-bridge driver for GaN FETs. This EVM consists on two Gallium Nitride FETs configured in a half-bridge, driven by a single LMG1210. No controller is present on the board.
Eigenschaften
- Demonstrates high frequency capability of driver
- Demonstrates high CMTI withstand of the driver
- Demonstrates the excellent propagation and matching and strength of the driver
- Demonstrates the dead-time block functionaliy and the positive impact on efficiency
- This is a PCB (hardware), which is orderable and demonstrates the driver stage for a laser to be used in classD audio, Envelope Tracking and high-frequency DCDC applications.
Typische Anwendungen
- High-speed DC-DC converters
- High-precision motor control
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR(V (DC)) | Bauform | Betriebstemperatur | DF(%) | RISO | Keramiktyp | L(mm) | B(mm) | H(mm) | Fl(mm) | Verpackung | Muster |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 25 V(DC), 10 µF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 25 V(DC) | Kapazität10 µF | Kapazität±10% | Nennspannung25 V (DC) | Bauform1206 | Betriebstemperatur -55 °C up to +125 °C | Verlustfaktor10 % | Isolationswiderstand0.01 GΩ | KeramiktypX7R Klasse II | Länge3.2 mm | Breite1.6 mm | Höhe1.6 mm | Pad Dimension0.5 mm | Verpackung7" Tape & Reel |