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Texas Instruments AMC1311DWVR | Demoboard TIDA-01606 HV Card
10kW 3-Phase 3-Level Grid Tie Inverter Reference Design for Solar String Inverter
Overview
| Topology | Other Topology |
| IC revision | E4 |
Description
This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC grid-tie inverter stage.Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching loss ensures higher DC bus voltages of up to 1000V and lower switching losses with a peak efficiency of 99 percent. This design is configurable to work as a two-level or three-level inverter.The system is controlled by a single C2000 microcontroller (MCU), TMS320F28379D, which generates PWM waveforms for all power electronic switching devices under all operating modes.
Features
- Rated Nominal and Max Input Voltage at 800-V and 1000-V DC
- Max 10-kW/10-kVA Output Power at 400-V AC 50- or 60-Hz Grid-Tie Connection
- Operating Power Factor Range From 0.7 Lag to 0.7 Lead
- High-Voltage (1200-V) SiC MOSFET-Based FullBridge Inverter for Peak Efficiency of 98.5%
- Compact Output Filter by Switching Inverter at 50 kHz
- <2% Output Current THD at Full Load
- Isolated Driver ISO5852S With Reinforced Isolation for Driving High-Voltage SiC MOSFET and UCC5320S for Driving Middle Si IGBT
- Isolated Current Sensing Using AMC1301 for Load Current Monitoring
- TMS320F28379D Control Card for Digital Control
Typical applications
- Uninterruptible Power Supplies
- Photovoltaic Inverters
- Industrial Motor Drives
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | C | Tol. C | VR(V (DC)) | Size | Operating Temperature | DF(%) | RISO | Ceramic Type | L(mm) | W(mm) | Fl(mm) | Packaging | Pins | Mount | Working Voltage(V (AC)) | Z @ 100 MHz(Ω) | Zmax(Ω) | Test Condition Zmax | IR(mA) | Z @ 1 GHz(Ω) | H(mm) | Type | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 16 V(DC), 10 nF, ±10% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 16 V(DC) | Capacitance10 nF | Capacitance±10% | Rated Voltage16 V (DC) | Size0603 | Operating Temperature -55 °C up to +125 °C | Dissipation Factor3.5 % | Insulation Resistance10 GΩ | Ceramic TypeX7R Class II | Length1.6 mm | Width0.8 mm | Pad Dimension0.4 mm | Packaging7" Tape & Reel | – | – | – | – | – | – | – | – | Height0.8 mm | – | |||||
 | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | Size0603 | Operating Temperature -55 °C up to +125 °C | – | – | – | Length1.6 mm | Width0.8 mm | Pad Dimension0.3 mm | – | – | MountSMT | – | Impedance @ 100 MHz26 Ω | Maximum Impedance39 Ω | Maximum Impedance515 MHz | Rated Current6500 mA | Impedance @ 1 GHz33 Ω | Height0.8 mm | TypeHigh Current | ||||
 | Simulation– | Downloads7 files | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWR-PHD Pin Header - Single | – | – | – | – | Operating Temperature -40 °C up to +105 °C | – | Insulation Resistance1000 MΩ | – | Length10.16 mm | – | – | PackagingBag | Pins4 | MountTHT | Working Voltage250 V (AC) | – | – | – | Rated Current3000 mA | – | – | TypeAngled |