IC manufacturers Skyworks
IC manufacturers (103)
- All manufacturers
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (140)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (267)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (337)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (97)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (58)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Skyworks Si3406-GM | Demoboard Si3406FB12V2KIT
Si3406-GM Class 3 15W Power Over Ethernet (PoE) PD Interface Devices
Overview
| Topology | LAN / POE |
| Input voltage | 37-57 V |
| Output 1 | 12 V / 0.45 A |
| IC revision | 1 |
Description
The Si3406 3.3 V Class 2 evaluation kit demonstrates a complete isolated 7 W Power over Ethernet PD system using our Si3406 PoE PD device. A single Si3406 manages the PoE interface and dc-dc conversion. The Si3406 PD integrates an internal rectifier bridge, detection circuit, classification circuit, dc/dc switch, hotswap switch, TVS overvoltage protection, dynamic soft-start circuit, cycle-by-cycle current limit, thermal shutdown, optional synchronous secondary rectification driver, automatic and user-mode MPS functionality, and inrush current protection. The isolated flyback converter outputs up to 1.45 A for a total power of 7 W while using a standard, off-the-shelf transformer. The Sifos IEEE compliance report, schematics, and layout, are all found in the User’s Guide.
Features
- IEEE 802.3at compliant
- Very small application PCB surface
- High efficiency
- High integration
- Low-profile 4 x 4 mm 20-pin QFN
- Integrated diode bridge
- Integrated thermal shutdown protection
- Low BOM Cost
- Automatic and user mode MPS generation
- Integrated transient overvoltage protection
Typical applications
- Voice over IP telephones, Wireless access points, Security and surveillance IP cameras, Point-of-sale terminals, Internet appliances, Network devices
- Lighting luminaires
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | Data rate | PoE | Ports | Tab | Improved CMRR | Operating Temperature | LED | PHY Chip Mode | USB | Shield Tabs | C | VR(V (DC)) | Endurance(h) | IRIPPLE(mA) | ILeak(µA) | DF(%) | Pitch(mm) | Ø D(mm) | L(mm) | Packaging | Z @ 100 MHz(Ω) | Zmax(Ω) | Test Condition Zmax | IR 2(mA) | RDC max.(Ω) | Type | Version | VIN | VOut1(V) | IOut1(mA) | L(µH) | n | VT(V (DC)) | Size | Mount | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-RJ45 LAN Through Hole Reflow, 100BASE-TX, PoE | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-RJ45 LAN Through Hole Reflow | Data rate100BASE-TX | PoEPoE | Ports1x1 | Tab PositionUp | Improved Common Mode RejectionNo | Operating Temperature -40 °C up to +85 °C | LED (Left-Right)green/yellow - green/yellow | PHY Chip Modecurrent | USBNo | Shield TabsNo | – | – | – | – | – | – | – | – | Length21.5 mm | – | – | – | – | – | – | – | – | – | – | – | Inductance350 µH | Turns Ratio1:1 | Insulation Test Voltage2250 V (DC) | – | MountTHR | ||||
 | WE-CBF SMT EMI Suppression Ferrite Bead, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-CBF SMT EMI Suppression Ferrite Bead | – | – | – | – | – | Operating Temperature -55 °C up to +125 °C | – | – | – | – | – | – | – | – | – | – | – | – | Length2 mm | – | Impedance @ 100 MHz1500 Ω | Maximum Impedance1800 Ω | Maximum Impedance70 MHz | Rated Current 21000 mA | DC Resistance0.3 Ω | TypeHigh Current | VersionSMT | – | – | – | – | – | – | Size0805 | MountSMT | ||||
 | WCAP-ATG8 Aluminum Electrolytic Capacitors, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-ATG8 Aluminum Electrolytic Capacitors | – | – | – | – | – | – | – | – | – | – | Capacitance330 µF | Rated Voltage16 V (DC) | Endurance 2000 | Ripple Current407 mA | Leakage Current52.8 µA | Dissipation Factor16 % | Pitch3.5 mm | Diameter8 mm | Length11.5 mm | PackagingAmmopack | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | ||||
 | WE-PoE Power over Ethernet Transformer, –, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-PoE Power over Ethernet Transformer | – | – | – | – | – | Operating Temperature -40 °C up to +125 °C | – | – | – | – | – | – | – | – | – | – | – | – | Length12.5 mm | – | – | – | – | – | – | – | VersionFlyback | Input Voltage 40 - 57 V (DC) | Output Voltage 112 V | Output Current 1600 mA | Inductance235 µH | Turns Ratio2.75:1:1 | Insulation Test Voltage1500 V (DC) | SizeEP10 | – |