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reference designNCP51820 | Demoboard NCP51820GAN1GEVB

Onsemi NCP51820 | Demoboard NCP51820GAN1GEVB

NCP51820GAN1GEVB: NCP51820 GaN driver evaluation board for 650 V, 50 mOhm E-mode GaN HEMT

Overview

TopologyFlyback Converter
IC revision1.0

Description

he NCP51820 HB GaN Driver Evaluation Board (EVB) is intended to replace the driver and power MOSFETs used in existing half−bridge or full−bridge power supplies. This EVB highlights the performance, simplicity and minimal number of components required to efficiently and reliably drive two gallium nitride power switches used in a high−voltage, totem pole configuration. Intended applications include off−line power converter topologies such as: LLC, phase−shifted full−bridge, totem pole PFC, active clamp flyback and forward, dual active−bridge, Phi−2 and high voltage synchronous buck.

More information

Parts approved by Onsemi

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Pins
Type
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L(mm)
IR(A)
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61300611121
SPECWR-PHD Pin Header - Single, 6, Straight

PCN pending

Due to a pending PCN, a modification of the component will be implemented soon. Please find the PCN below. If you have further questions please get in contact with our sales staff.

Availability
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Downloads7 files

Status
ActiveProduction is active. Expected lifetime: >10 years.
iProduction is active. Expected lifetime: >10 years.
Product seriesWR-PHD Pin Header - Single
Pins6 
TypeStraight 
MountTHT 
Length15.24 mm
Rated Current3 A
Working Voltage250 V (AC)
Operating Temperature -40 °C up to +105 °C
PackagingBag 
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