IC manufacturers Onsemi

IC manufacturers (103)

Onsemi FDMQ8205 | Demoboard FEBFDMQ8205_25.5W

GreenBridge for Power Over ethernet

Overview

TopologyFlyback Converter
Input voltage42.5-57 V
Output 110 V / 2.5 A
Output 25 V / 5 A
IC revision0.0.2

Description

GreenBridge™ FDMQ8205 evaluation board highlights the polarity protection bridge at input of PoE (Power over Ethernet) PD (Power device) so that the input will be insensitive to the polarity of a power source coupled to the device. The device itself may be sensitive to the polarity of the power source, but bridge rectifier can be configured to provide the proper polarity to the device when the polarity of the power source is reversed. GreenBridge replaces the conventional diode bridge to reduce the power dissipation caused by the large voltage drop of a diode bridge, resulting in a high efficiency power device while not compromising IEEE802.3af/at. The small package size of MLP4.5x5 reduces PCB area and increases power density

Features

Active MOSFET bridge with low forward drop to replace conventional diode bridge IEEE802.3af/at compliant

  • . Not compromise PoE detection and classification
  • . Works with 2 and 4-pair architecture Enhanced thermal performance package of 4x4.5mm MLP Wide operating voltage range up to 70V

Typical applications

  • Power over Ethernet (PoE) Power device (PD)

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC max.(mΩ)
fres(MHz)
Data rate
PoE
Ports
Tab
Improved CMRR
Operating Temperature
LED
PHY Chip Mode
Mount
Shield Tabs
Samples
WE-LHMI SMT Power Inductor, 0.33 µH, 17.8 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance0.33 µH
Performance Rated Current17.8 A
Saturation Current @ 10%27.1 A
Saturation Current @ 30%47 A
DC Resistance3.9 mΩ
Self Resonant Frequency124 MHz
Operating Temperature -40 °C up to +125 °C
MountSMT 
WE-LHMI SMT Power Inductor, 6.8 µH, 4.45 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance6.8 µH
Performance Rated Current4.45 A
Saturation Current @ 10%5.45 A
Saturation Current @ 30%10.6 A
DC Resistance60 mΩ
Self Resonant Frequency18 MHz
Operating Temperature -40 °C up to +125 °C
MountSMT 
WE-RJ45 LAN Transformer, 350 µH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance350 µH
Data rate1000BASE-T 
PoEPoE+ 
Ports
Tab PositionUp 
Improved Common Mode RejectionYes 
Operating Temperature 0 °C up to +70 °C
LED (Left-Right)green/orange-yellow 
PHY Chip Modecurrent & voltage 
MountTHT 
Shield TabsYes