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reference designLM5017 | Demoboard REF_10KW_3LBUCK_SIC400

Infineon Technologies LM5017 | Demoboard REF_10KW_3LBUCK_SIC400

3-level flying capacitor buck with CoolSiC™ MOSFET 400 V G2

Overview

TopologyBuck Converter
Input voltage55-400 V
Switching frequency32.5 kHz
Output 1300 V / 24 A
Output 2300 V / 34 A
IC revisionV1.0

Description

The reference board REF_10KW_3LBUCK_SIC400 uses a 3-level-flying capacitor Buck DC/DC converter, which can also be reconfigured to be used as a 2-level Buck DC/DC converter. The primary goal of the platform is to enable evaluation of CoolSiC™ MOSFET 400 V and 650 V G2 in TOLL and D2PAK-7 packages. The reference design also aims to provide layout guidelines to optimize the commutation and gate loops and provide solutions for auxiliary supply for floating gate-drive, startup, pre-charging and voltage balancing of the flying capacitor in multi-level topologies. By enabling a fair benchmarking between 3-level (3L) and 2-level (2L) topologies, you can evaluate the following benefits of adopting a 3-level topology: • Lower voltage swing across the inductor (factor 0.5 x) combined with the benefits of “series interleaving”, where the inductor ripple frequency is double that of the MOSFET switching frequency, allows for a significant reduction (factor 0.25 x) in required inductance value. • For a given size, the inductor can be optimized to reduce conduction and core losses for higher efficiency. Alternatively, a smaller inductor can be used to increase power density. • Lower blocking voltage across the MOSFETs enable the use of lower-voltage rated switches with better switching Figures of Merit (FoM) – effectively lowering the switching losses significantly.

Features

Evaluate CoolSiC™ 400 V/650 V G2 MOSFETsCompare 3-level vs 2-level topologiesFlying capacitor balancing algorithmCompact planar transformer gate supplyTest bipolar vs unipolar gate driveAdjustable gate-drive voltageSupports Kelvin-/Power-Source gate driveLow inductance high-power designHeatsink-based cooling systemSupports Kelvin-/Power-Source gate drive

Typical applications

  • Renewables
  • Energy Storage Systems and UPS
  • High voltage solid state power distribution
  • Motor control and drives
  • Server (AI) and telecom SMPS
  • Class-D Audio

More information

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Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
L(µH)
IRP,40K(A)
ISAT,30%(A)
RDC typ.(mΩ)
fres(MHz)
VOP(V)
Mount
SamplesAvailability & Sample
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74438356220
SPECWE-MAPI SMT Power Inductor, 22 µH, 1.85 A

PCN pending

Due to a pending PCN there will be a new datasheet revision issued for this order code soon. Please find the actual as well based on valid PCN date the new revision datasheet below. If you have further questions please get in contact with our sales staff.

Simu­lation
Availability
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Downloads10 files

Status Activei| Production is active. Expected lifetime: >10 years.
Product seriesWE-MAPI SMT Power Inductor
Inductance22 µH
Performance Rated Current1.85 A
Saturation Current @ 30%2.45 A
DC Resistance250 mΩ
Self Resonant Frequency11 MHz
Operating Voltage80 V
MountSMT 
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