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GaNPower GPIHV15DK | Demoboard GPI-HV-ACDC-QR-1.6-02
N-channel 1200V15AGaNPower HEMT in TO252 Package
Overview
| Topology | Flyback Converter |
| Input voltage | 200-500 V |
| IC revision | 1 |
Description
These devices are N-channel 1200 V Power GaN HEMTs based on proprietary E-mode GaN on silicon technology.The resulting product has extremely low on state resistance, very low input capacitance and zero reverse recoverycharge making it especially suitable for applications which require superior power density, ultra-high switchingfrequency and outstanding efficiency.
Features
- Ultra-low RDS(on)
- High dv/dt capability
- Extremely low input capacitance
- ZeroQrr
- Outstanding switching performance
- Low Profile
Typical applications
- Switching Power Applications