GaNPower GPIHV15DK | Demoboard GPI-HV-ACDC-QR-1.6-02

Beschreibung

These devices are N-channel 1200 V Power GaN HEMTs based on proprietary E-mode GaN on silicon technology.The resulting product has extremely low on state resistance, very low input capacitance and zero reverse recoverycharge making it especially suitable for applications which require superior power density, ultra-high switchingfrequency and outstanding efficiency.

Eigenschaften

• Ultra-low RDS(on)
• High dv/dt capability
• Extremely low input capacitance
• ZeroQrr
• Outstanding switching performance
• Low Profile

Typische Anwendungen

• Switching Power Applications

Weiterführende Informationen

• Produktseite des IC-Herstellers