GaN Systems HEY1011-L12C | Demoboard GS-EVB-HB-0650603B-HD

Description

The GS-065-060-3-B is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS-065-060-3-B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

Features

• 650 V enhancement mode power transistor
• Bottom-cooled, low inductance GaNPX® package
• RDS(on) = 25 mΩ
• IDS(max) = 60 A
• Simple gate drive Requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 / +10 V)
• Very high switching frequency (> 10 MHz)
• Fast and controllable fall and rise times
• Reverse conduction capability
• Zero reverse recovery loss
• Small 11 x 9 mm2 footprint
• Dual gate pads for optimal board layout
• RoHS 3 (6+4) compliant

Typical applications

• Residential Energy Storage System (ESS)
• 3 kW Server AC/DC power supply
• 3 ~ 7 kW PV Inverter, Motor Drive / VFD

More information

• Datasheet
• IC product information