IC manufacturers Cambridge GaN Devices

IC manufacturers (103)

Cambridge GaN Devices CGD65B200S2 | Demoboard CGD-ASYEVB00201-02 / CGD-UG2301

Quasi-Resonant Flyback 65 W

Overview

TopologyFlyback Converter
Input voltage90-264 V
Switching frequency25-261 kHz
Output 120 V / 3.25 A
IC revision1

Description

This QR Flyback Evaluation Board uses an ICeGaN™ 650 V device with either 200 mΩ or 240 mΩ RDS(ON) as the primary switching transistor and uses ICeGaN´s integrated current sense feature in the current control loop.This topology highlights the No Load Power Consumption of ICeGaN, so crutial for products in this power range combined with state of the art switching performance togather with the thermal benefits ICeGaN current sense reducing power dissipation and reducing device temperature.

Features

  • Using ICeGaN 650 V, 200 mΩ or 240 mΩ in DFN 5x6 Vin 100-260 VAC
  • VIN 100-260 VAC
  • VOUT 20 VDC
  • Maximum Efficiency 93.8%
  • Typical frequency range 25 ~ 240kHz
  • No shunt current sense resistors – uses ICeGaN current sense feature

Typical applications

  • PSUs, Industrial SMPS and inverters
  • Gaming PSUs, PC power
  • LED lighting

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
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Operating Temperature
IR(A)
L(µH)
RDC max.(mΩ)
VR(V (AC))
VT(V (AC))
Material
L(mm)
W(mm)
H(mm)
Mount
Samples
WE-CMB NiZn Common Mode Power Line Choke, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Operating Temperature -40 °C up to +125 °C
Rated Current10 A
Inductance16 µH
DC Resistance3 mΩ
Rated Voltage250 V (AC)
Insulation Test Voltage1500 V (AC)
MaterialNiZn 
Length18.5 mm
Width14.5 mm
Height22 mm
MountTHT 
WE-STST Super Tiny Signal Transformer, Long distance sensing at low frequency, 1:4.5:4.5:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Turns Ratio1:4.5:4.5:1 
Operating Temperature -40 °C up to +105 °C
Inductance2000 µH
Insulation Test Voltage400 V (AC)
Length4.7 mm
Width3.22 mm
Height2.9 mm