IC manufacturers (103)
- All manufacturers
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (140)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (267)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (337)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (97)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (58)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Analog Devices LTC3310-1 | Demoboard DC3043A
3.3V to 1.0V at 10A, 2MHz Automotive Low EMI Buck Regulator in a 2.11cm2 Solution
Overview
| Topology | Buck Converter |
| Input voltage | 2.25-5.5 V |
| Switching frequency | 500-5000 kHz |
| Output 1 | 1 V / 10 A |
Description
Demonstration Circuit 3043A shows the LTC3310-1 10A,1V fixed output, synchronous step-down Silent Switcher®operating as a 2MHz 3.3V to 1.0V 10A buck regulator. TheLTC3310-1 supports operating frequencies from 500kHz up to 5MHz. The LTC3310-1 is a compact, ultralow emission,high efficiency, and high speed synchronous monolithic step-down switching regulator. The LTC3310-1 has Active Voltage Positioning (AVP) where the output voltage is dependent on load current. At light loads the output voltage is regulated above the nominal value. At full load the output voltage is regulated below the nominal value.The DC load regulation is adjusted to improve transient performance and reduce output capacitor requirements.DC3043A is set up to run in forced continuous mode with a 2MHz switching frequency but can be configured to pulse skip mode and different switching frequencies. RT is connected to VIN which sets the MODE/SYNC pin as an input and allows the LTC3310-1 to sync from an external clock. Connecting the MODE/SYNC pin to VIN sets the mode to pulse skip mode and connecting the MODE/SYNC pin to GND sets the mode to forced continuous mode.The DC3043A also has an EMI filter to reduce conducted EMI. This EMI filter can be included by applying the input voltage at the VIN EMI terminal. The EMI performance of the board is shown in the EMI TEST RESULTS section.The red lines in the EMI performance graphs illustrate the CISPR25 Class 5 peak limits for the conducted and radiated emission tests.
Features
- Silent Switcher Architecture:UItralow EMI Emissions(LTC3310S and LTC3310S-1)
- High Efficiency: 4.5mΩ NMOS and 16mΩ PMOS
- Wide Bandwidth, Fast Transient Response
- Safely Tolerates Inductor Saturation in Overload
- VIN Range: 2.25V to 5.5V
- VOUT Range: 0.5V to VIN
- VOUT Accuracy: ±1% with Remote Sense
- Peak Current Mode Control
- 35ns Minimum On-Time
- Programmable Frequency to 5MHz
- Shutdown Current: 1µA
- Precision 400mV Enable Threshold
- Output Soft-Start with Voltage Tracking
- Power Good Output
- Die Temperature Monitor
- Configurable for Paralleling Power Stages
- Thermally-Enhanced 3mm × 3mm LQFN Package
- AEC-Q100 Qualified for Automotive Applications
Typical applications
- Communications
- Servers, Telecom Power Supplies, Distributed DC Power Systems (POL), FPGA, ASIC, µP Core Supplies.
- Industrial
- Automotive
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | C | Tol. C | VR(V (DC)) | Size | DF(%) | RISO | Ceramic Type | W(mm) | Fl(mm) | Packaging | Z @ 100 MHz(Ω) | Zmax(Ω) | Test Condition Zmax | IR(mA) | Z @ 1 GHz(Ω) | H(mm) | Type | Pins | Mount | L(mm) | Working Voltage(V (AC)) | Operating Temperature | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 25 V(DC), 33 nF, ±10% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 25 V(DC) | Capacitance33 nF | Capacitance±10% | Rated Voltage25 V (DC) | Size0402 | Dissipation Factor3.5 % | Insulation Resistance10 GΩ | Ceramic TypeX7R Class II | Width0.5 mm | Pad Dimension0.25 mm | Packaging7" Tape & Reel | – | – | – | – | – | Height0.5 mm | – | – | – | Length1 mm | – | Operating Temperature -55 °C up to +125 °C | |||||
 | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | Size1812 | – | – | – | Width3.2 mm | Pad Dimension0.46 mm | – | Impedance @ 100 MHz100 Ω | Maximum Impedance160 Ω | Maximum Impedance1100 MHz | Rated Current8000 mA | Impedance @ 1 GHz150 Ω | Height2.3 mm | TypeHigh Current | – | MountSMT | Length4.5 mm | – | Operating Temperature -55 °C up to +125 °C | ||||
 | WR-PHD Jumper, –, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWR-PHD Jumper | – | – | – | – | – | Insulation Resistance1000 MΩ | – | – | – | PackagingBag | – | – | – | Rated Current3000 mA | – | – | – | Pins2 | – | – | Working Voltage200 V (AC) | Operating Temperature -25 °C up to +105 °C | |||
 | WR-PHD Pin Header, –, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWR-PHD Pin Header | – | – | – | – | – | Insulation Resistance1000 MΩ | – | – | – | PackagingBag | – | – | – | Rated Current2000 mA | – | – | TypeStraight | Pins3 | MountTHT | Length6 mm | Working Voltage200 V (AC) | Operating Temperature -40 °C up to +105 °C |