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Allegro Microsystems HEY1011-L12 | Demoboard HEY-HBDS-G-12D1-D

Single Floating – Isolated GaN FET Driver

Overview

TopologyHalf-Bridge Converter symmetrical isolated

Description

The Heyday Integrated Circuits Half Bridge Driver-Switch HEY-HBDS-G-12D1-D is a demonstration board containing two HEY1011-L12 GaN FET drivers and two GaN FETs configured in a half bridge configuration.

Features

  • Floating 650V isolated driver for highvoltage GaN FET’s
  • No bootstrap components or isolated supply required.
  • 100V/ns dv/dt immunity (CMTI)

  • 35ns propagation delay with excellent device-to-device matching of <5ns
  • Separate pull-up/ down drive output pins. Pull-down impedance ≤ 0.8Ω. Pull-up impedance ≤ 2.8Ω
  • ≥ 100μm Distance through isolation (DTI)
  • 5.5V < VDRIVE < 15V. - First pulse perfect -first drive pulse within specification
  • Continuous ON time capability – no need to recycle drive
  • Output drive pins OUTPU, OUTPD and OUTSS can swing ± 5kV with respect to GND
  • Safety-Related and Regulatory Approvals (planned)
  • 5700VRMS Withstand isolation voltage per UL 1577
  • 8000VPK Maximum transient isolation voltage per VDE0884-10
  • 630VPK Maximum working isolation voltage

Typical applications

  • Totem Pole PFC, Half/ Full-Bridge, LLC, SR Drivers, Multi-level converters using stacked switches, Secondary side control to primary drives
  • Automotive

More information

Parts approved by Allegro Microsystems

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SPECWR-PHD Pin Header - Single, 6, Straight

PCN pending

Due to a pending PCN, a modification of the component will be implemented soon. Please find the PCN below. If you have further questions please get in contact with our sales staff.

Availability
Status
ActiveProduction is active. Expected lifetime: >10 years.
iProduction is active. Expected lifetime: >10 years.
Pins
TypeStraight 
MountTHT 
Length15.24 mm
Rated Current3 A
Working Voltage250 V (AC)
Operating Temperature -40 °C up to +105 °C
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