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Allegro Microsystems A80605-1
High Power LED Driver with Pre-Emptive Boost for Ultra-High Dimming Ratio and Low Output Ripple
Overview
| Topology | SEPIC Buck-Boost Topology |
| Input voltage | 8-18 V |
| Switching frequency | 260-2300 kHz |
| Output 1 | 14 V / 0.1 A |
| IC revision | 7 |
Description
The A80605 is a multi-output LED driver for automotive applications such as exterior lighting, heads-up display, and mid-size LCD backlighting. It implements a current-mode boost/SEPIC converter with gate driver for external N-channel MOSFET. The A80605 provides six integrated current sinks driving up to 140 mA per string. Multiple sinks can be paralleled together to achieve higher LED currents up to 840 mA. The IC operates from single power supply from 4.5 to 40 V; once started, it can continue to operate down to 4 V. This allows it to withstand stop/start, cold crank, and load dump conditions encountered in automotive systems. The A80605 can control LED brightness through an external PWM signal. By using the patented Pre-Emptive Boost control, an LED brightness contrast ratio of 15,000:1 can be achieved using PWM dimming at 200 Hz. A higher ratio of 150,000:1 is possible when using a combination of PWM and analog dimming.
Typical applications
- Automotive infotainment backlighting, Automotive heads-up display, Automotive interior and exterior lighting
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | L1(µH) | L2(µH) | n | IR(A) | IR 2(A) | ISAT1(A) | ISAT2(A) | RDC1 max(mΩ) | RDC2 max(mΩ) | LS(µH) | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-MCRI SMT Molded Coupled Inductor, 22 µH, 22 µH | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MCRI SMT Molded Coupled Inductor | Inductance 122 µH | Inductance 222 µH | Turns Ratio1:1 | Rated Current3.4 A | Rated Current 23.4 A | Saturation Current 18.1 A | Saturation Current 28.1 A | DC Resistance 1106 mΩ | DC Resistance 2106 mΩ | Leakage Inductance0.335 µH |