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Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IR 1(mA) | IR 2(mA) | ISAT(mA) | RDC(mΩ) | fres(MHz) | Typ | H(mm) | B(mm) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-PMI Power-Multilayer-Induktivität, 0.22 µH, 900 mA | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PMI Power-Multilayer-Induktivität | Induktivität0.22 µH | Nennstrom 1900 mA | Nennstrom 21200 mA | Sättigungsstrom1300 mA | Gleichstromwiderstand120 mΩ | Eigenresonanzfrequenz250 MHz | TypLow Profile | Höhe0.5 mm | Breite0.8 mm |