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Details
| Topologie | Leistungsfaktor-Korrektur |
| Eingangsspannung | 85-260 V |
| Ausgang 1 | 390 V |
| IC-Revision | 1.1 |
Beschreibung
The Evaluation Board for a bridgeless totem-pole Power-Factor-Correction (PFC) circuit, using Transphorm GaN power HEMTs, is described in this paper. In this board, by using a diode-free GaN power HEMT bridge with low reverse-recovery charge, very-high-efficiency single-phase AC-DC conversion is realized. In this circuit, the performance and efficiency improvement, achieved by use of the GaN HEMTs in the fast-switching leg of the circuit, is further enhanced by use of low resistance MOSFETs in the slow-switching leg.
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | IR(A) | L(mH) | RDC max.(mΩ) | VR(V (AC)) | VT(V (AC)) | Material | L(mm) | B(mm) | H(mm) | Montageart | MusterVerfügbarkeit & Muster | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SPECWE-CMBNC Stromkompensierte Netzdrossel Nanokristallin, 15 A, 1 mH | Verfügbarkeit – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Nennstrom15 A | Induktivität1 mH | Gleichstromwiderstand3.2 mΩ | Nennspannung300 V (AC) | Prüfspannung2100 V (AC) | MaterialNanokristallin | Länge24 mm | Breite17 mm | Höhe25 mm | MontageartTHT | –Verfügbarkeit prüfen |
Verfügbarkeitsprognose
WE Artikelnummer VerpackungseinheitenWiederbeschaffungszeit
––– Wochen
| Erwartete Verfügbarkeit | Eingehender Bestand | Menge |
|---|---|---|
| Aktuelle Verfügbarkeit | – | – |
Für diese Mengenanfrage gibt es keine Prognose.
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