IC-Hersteller Transphorm

IC-Hersteller (96)

Transphorm SI8273AB-IS1 | Demoboard TDINV1000P100-KIT

1kW Inverter GaN Evaluation Platform

Details

TopologieInverswandler
Eingangsspannung0-420 V
IC-Revision1

Beschreibung

The TDINV1000P100 1.0kW inverter kit provides an easy way to evaluate the performance advantages of GaN power FETs invarious inverter applications, such as solar and uninterruptible power supplies (UPS). The kit provides the main features of asingle-phase inverter in a proven, functional configuration, operating at or above 100kHz. At the core of the inverter are fourTPH3206PSB 180mΩ GaN FETs configured as a full bridge. These are tightly coupled to gate-drive circuits on a board whichalso includes flexible microcontroller options and convenient communication connection to a PC. The switch-mode powersignals are filtered to provide a pure sinusoidal output.

Eigenschaften

  • JEDEC qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by— Intrinsic lifetime tests— Wide gate safety margin— Transient over-voltage capability
  • Very low QRR
  • Reduced crossover loss
  • RoHS compliant and Halogen-free packaging

Typische Anwendungen

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieCTol. CVR
(V (DC))
BauformBetriebstemperaturQ
(%)
RISOKeramiktypL
(mm)
W
(mm)
H
(mm)
Fl
(mm)
Verpackung Muster
885012006008SPEC
8 Dateien WCAP-CSGP MLCCs 10 V(DC)100 pF ±5% 10 0603 -55 °C up to +125 °C 100010 GΩ NP0 Klasse I 1.6 0.8 0.8 0.4 7" Tape & Reel
885012008014SPEC
8 Dateien WCAP-CSGP MLCCs 16 V(DC)220 pF ±5% 16 1206 -55 °C up to +125 °C 100010 GΩ NP0 Klasse I 3.2 1.6 0.8 0.6 7" Tape & Reel
Artikel Nr. Daten­blatt Simu­lation
885012006008SPEC
885012008014SPEC
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieCTol. CVR
(V (DC))
BauformBetriebstemperaturQ
(%)
RISOKeramiktypL
(mm)
W
(mm)
H
(mm)
Fl
(mm)
Verpackung Muster