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Texas Instruments bq501210 | Demoboard bq501210EVM-756
bq501210 WPC 1.2 Wireless Power Transmitter Manager Evaluation Module with 15-W Power Delivery
Details
| Topologie | Drahtlose Energieübertragung |
| IC-Revision | 00 |
Beschreibung
The bq501210EVM-756 wireless power transmitter evaluation module from Texas Instruments is a high-performance, easy-to-use development module for the design of wireless power solutions. The bq501210 evaluation module (EVM) provides all the basic functions of a Qi-compliant, wireless charger pad. The 19-V input, single coil transmitter (TX) enables designers to speed the development of their end-applications. The EVM supports WPC v1.0, WPC v1.1 and WPC v1.2 receivers (RX), and is backwards compatible with WPC 5W and TI 10W RX solutions.The bq501210EVM-756 EVM demonstrates the transmitter portion of the bqTESLA™ wireless power system. This transmitter EVM is a complete transmitter-side solution that powers a bqTESLA receiver. The EVM requires a single 12-V power supply capable of up to 2.0A to operate and combines the transmitter electronics, input power circuit, LED indicators, and the transmitting coil on the single printed-circuit board (PCB). The EVM is a non-space optimized, open design allowing easy access to key points of the electrical schematic.
Eigenschaften
5-W solution for WPC v1.1 receivers15-V to 19-V input and fixed operatiing frequency for full 15-W results12-V input for reduced power (>10W) solutionsEnchanced Foreign Object Detection (FOD) with FOD ping detecting objects prior to power transferWPC v1.2 FOD, WPC v1.1 FOD and WPC v1.0 Parasitic metal Object Detection (PMOD)Transmitter-coil mounting pad providing the corect ereceiver interfaceCompact power section design using the bq500100 NexFET power stageWurth 760 308 141 transmitter coil with no magnetLED and audio indication of power transfer
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | λDom typ.(nm) | Farbe | λPeak typ.(nm) | IV typ.(mcd) | VF typ.(V) | Chiptechnologie | 2θ50% typ.(°) | ISAT(A) | Montageart | Version | Compliance | Bauform | L(µH) | IR(A) | RDC max.(mΩ) | fres(MHz) | Q(%) | P(W) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WL-SMCW SMT Mono-color Chip LED Waterclear, 570 nm, Hellgrün | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWL-SMCW SMT Mono-color Chip LED Waterclear | dominante Wellenlänge [typ.]570 nm | FarbeHellgrün | Spitzen-Wellenlänge [typ.]572 nm | Lichtstärke [typ.]40 mcd | Durchlassspannung [typ.]2 V | ChiptechnologieAlInGaP | Abstrahlwinkel Phi 0° [typ.]140 ° | – | MontageartSMT | – | – | Bauform0603 | – | – | – | – | – | – | ||||
| WL-SMCW SMT Mono-color Chip LED Waterclear, 590 nm, Gelb | Downloads26 Dateien Strahldaten
| Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWL-SMCW SMT Mono-color Chip LED Waterclear | dominante Wellenlänge [typ.]590 nm | FarbeGelb | Spitzen-Wellenlänge [typ.]595 nm | Lichtstärke [typ.]120 mcd | Durchlassspannung [typ.]2 V | ChiptechnologieAlInGaP | Abstrahlwinkel Phi 0° [typ.]140 ° | – | MontageartSMT | – | – | Bauform0603 | – | – | – | – | – | – | |||
| WL-SMCW SMT Mono-color Chip LED Waterclear, 630 nm, Superrot | Downloads26 Dateien Strahldaten
| Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWL-SMCW SMT Mono-color Chip LED Waterclear | dominante Wellenlänge [typ.]630 nm | FarbeSuperrot | Spitzen-Wellenlänge [typ.]645 nm | Lichtstärke [typ.]60 mcd | Durchlassspannung [typ.]1.9 V | ChiptechnologieAlInGaP | Abstrahlwinkel Phi 0° [typ.]140 ° | – | MontageartSMT | VersionSMT | – | Bauform0603 | – | – | – | – | – | – | |||
 | WE-TPC SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TPC SMT-Speicherdrossel | – | – | – | – | – | – | – | Sättigungsstrom0.13 A | MontageartSMT | VersionSMT | – | Bauform4818 | Induktivität330 µH | Nennstrom0.15 A | Gleichstromwiderstand4500 mΩ | Eigenresonanzfrequenz5.5 MHz | – | – | ||||
 | WE-PD SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | – | – | – | – | – | – | – | Sättigungsstrom4.1 A | MontageartSMT | VersionPerformance | – | Bauform1030 | Induktivität10 µH | Nennstrom2.6 A | Gleichstromwiderstand62 mΩ | Eigenresonanzfrequenz25 MHz | – | – | ||||
 | WE-WPCC Wireless Power Transfer Transmitter Spule, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | – | – | – | – | – | – | – | Sättigungsstrom16 A | MontageartTHT | VersionTHT | ComplianceQi - A29; MP-A5 | Bauform53 x 53 x 6 mm | Induktivität10 µH | Nennstrom9 A | Gleichstromwiderstand30 mΩ | Eigenresonanzfrequenz11 MHz | Güte200 % | Leistungsvermögen [1]150 W |