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IC-Hersteller (103)

Texas Instruments UCC21530 | Demoboard TIDA-010054

Bi-directional, dual active bridge reference design for level 3 electric vehicle charging stations

Details

TopologieSonstige Topologie
IC-RevisionE1

Beschreibung

This reference design provides an overview on the implementation of a single-phase dual active bridge (DAB) DC/DC converter. DAB topology offers advantages like soft-switching commutations, a decreased number of devices and high efficiency. The design is beneficial where power density, cost, weight, galvanic isolation, high voltage conversion ratio and reliability are critical factors, making it ideal for EV charging stations and energy storage applications. Modularity and symmetrical structure in DAB allow for stacking converters to achieve high power throughput and facilitate a bidirectional mode of operation to support battery charging and discharging applications.

Eigenschaften

  • Dual-channel UCC21530 with reinforced isolation used for driving SiC MOSFETs in the half-bridge configuration
  • TMS320F280049 controller for implementation of digital control
  • Isolated voltage and current sensing
  • Primary voltage of 700-800-V DC, secondary voltage of 380-500-V DC, maximum power output of 10 kW
  • Full load efficiency of 97.6% and a peak efficiency of 98.2% at 6 KW
  • High-power density of 1.92 KW/L

Typische Anwendungen

  • Solar string and central inverters
  • AC inverter and servo drive
  • AC-to-DC and DC-to-DC charging piles / Energy storage systems
  • AC-to-DC and DC-to-DC power delivery

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
Bauform
IR(A)
ISAT,30%(A)
fres(MHz)
Kernmaterial
Typ
Montageart
L(mm)
Arbeitsspannung(V (AC))
Betriebstemperatur
B(mm)
H(mm)
Ti
Tl(mm)
Pins
Muster
WE-HCFT THT-Hochstrominduktivität, 15 µH, 3540
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität15 µH
Bauform3540 
Nennstrom45.3 A
Sättigungsstrom @ 30%51.6 A
Eigenresonanzfrequenz12 MHz
KernmaterialMnZn 
MontageartTHT 
Länge41 mm
Betriebstemperatur -40 °C up to +125 °C
Breite36 mm
Höhe35 mm
Pins
WR-PHD Stiftleisten - Einreihig, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Nennstrom3 A
TypGerade 
MontageartTHT 
Länge5.08 mm
Arbeitsspannung250 V (AC)
Betriebstemperatur -40 °C up to +105 °C
Pins
WP-THRBU REDCUBE THR with internal through-hole thread, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Nennstrom50 A
MontageartTHR 
Betriebstemperatur -55 °C up to +150 °C
Breite7 mm
Höhe3 mm
InnengewindeM3 
Gewindelänge2.5 mm
Pins