| Topologie | Aufwärtswandler |
| Schaltfrequenz | 100-600 kHz |
| IC-Revision | D |
The TPS9260x-Q1 family of devices is a single-channel and dual-channel high-side-current LED driver. With full protection and diagnostics, this family of devices is dedicated for and ideally suited to automotive front lighting. The base of each independent driver is a peak-current-mode boost controller. Each controller has two independent feedback loops, a current-feedback loop with a high-side current-sensing shunt and a voltage-feedback loop with an external resistor-divider network. The controller delivers a constant output voltage or a constant output current. The connected load determines whether the device regulates a constant output current (if the circuit reaches the current set-point earlier than voltage set-point) or a constant output voltage (if the circuit reaches the voltage set-point is reached first, for example, in an open-load condition).
Each controller supports all typical topologies such as boost, boost-to-battery, SEPIC, or flyback.
Uses of the high-side PMOS FET driver are for PWM dimming of the LED string and for cutoff in case of an external short circuit to GND to protect the circuit.
Remarks:
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | IR,40K(A) | RDC max.(mΩ) | Bauform | Version | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-PD Speicherdrossel, 22 µH, 7 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD Speicherdrossel | Induktivität22 µH | Performance Nennstrom7 A | Sättigungsstrom 16.5 A | Sättigungsstrom @ 30%8 A | – | Eigenresonanzfrequenz10 MHz | – | Nennstrom5.3 A | Gleichstromwiderstand28 mΩ | Bauform1210 | VersionGestanzt | ||||
![]() | WE-HCI SMT-Hochstrominduktivität, 22 µH, 10.9 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität22 µH | Performance Nennstrom10.9 A | Sättigungsstrom 19 A | Sättigungsstrom @ 30%11 A | Gleichstromwiderstand14.6 mΩ | Eigenresonanzfrequenz10.5 MHz | MaterialMnZn | – | Gleichstromwiderstand15.77 mΩ | Bauform1890 | VersionSMT |